Electron-emitting device, electron source, and ima

专利名称：Electron-emitting device, electron source,

and image-forming apparatus

发明人：Sasaguri, Daisuke申请号：EP02014247.7申请日：20020626公开号：EP1271594A1公开日：20030102

专利附图：

摘要：An object of the present invention is to enhance a converging property of anelectron beam in an electron-emitting device in which a cathode electrode (2), aninsulating layer (4), and a gate electrode (5) are laminated and a through hole (6) is

formed by partially removing the gate electrode so as to obtain an exposed portion ofthe cathode electrode. In such an electron-emitting device in which the cathodeelectrode, the insulating layer, and the gate electrode are laminated and the throughhole is formed by partially removing the gate electrode so as to obtain the exposedportion of the cathode electrode, only a central region of the electron-emitting layer (7)on the cathode electrode is connected to the cathode electrode. With this structure, itbecomes possible to generate an electron beam only from the central region of theelectron-emitting layer connected to the cathode electrode and to realize an electron-emitting device having a small beam diameter and a high-definition image-formingapparatus.

申请人：CANON KABUSHIKI KAISHA

地址：3-30-2 Shimomaruko Ohta-ku, Tokyo JP

国籍：JP

代理机构：Leson, Thomas Johannes Alois, Dipl.-Ing.

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