7N60 Power MOSFET

7.4 Amps, 600/650 Volts

N-CHANNEL POWER MOSFET

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DESCRIPTION

Power MOSFET 7N60

The UTC 7N60 is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

󰂄 FEATURES

Lead-free: 7N60L Halogen-free: 7N60G

* RDS(ON) = 1.0Ω @VGS = 10 V

* Ultra low gate charge (typical 29 nC )

* Low reverse transfer Capacitance ( CRSS = typical 16pF ) * Fast switching capability * Avalanche energy tested

* Improved dv/dt capability, high ruggedness 󰂄

SYMBOL

2.Drain1.Gate

3.Source

󰂄 ORDERING INFORMATION

Ordering Number Pin Assignment

Package Packing

Normal Lead Free Plating Halogen Free 1 2 3 7N60-x-TA3-T 7N60L-x-TA3-T 7N60G-x-TA3-T TO-220 G D S Tube 7N60-x-TF1-T 7N60L-x-TF1-T 7N60G-x-TF1-T TO-220F1 G D S Tube 7N60-x-TF3-T 7N60L-x-TF3-T 7N60G-x-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

7N60L-x-TA3-T(1)Packing Type(2)Package Type(3)Drain-Source Voltage(4)Lead Plating(1) T: Tube(2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F(3) A: 600V, B: 650V(4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn www.unisonic.com.tw

Copyright © 2009 Unisonic Technologies Co., Ltd

1 of 7

QW-R502-076,E

7N60 Power MOSFET

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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT 7N60-A 600 V Drain-Source Voltage VDSS

7N60-B 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A Continuous ID 7.4 A Drain Current

A Pulsed (Note 2) IDM 29.6 Single Pulsed (Note 3)EAS 530 mJ Avalanche Energy

Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns

TO-220 142 W Power Dissipation PD

TO-220F/TO-220F1 48 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 7.4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

󰂄 THERMAL DATA

PARAMETER SYMBOL RATINGS UNIT TO-220 62.5 °C/W Junction to Ambient θJA

TO-220F/TO-220F162.5 °C/W TO-220 0.88 °C/W Junction to Case θJC

TO-220F/TO-220F12.6 °C/W 󰂄 ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAXUNIT

OFF CHARACTERISTICS

7N60-A 600 V

Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA

7N60-B 650 V

Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 1 μA

Forward VGS = 30V, VDS = 0V 100nA

Gate- Source Leakage Current IGSS

Reverse VGS = -30V, VDS = 0V -100nA

Breakdown Voltage Temperature I = 250μA,

△BVDSS/△TJD 0.67 V/°C

Coefficient Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0VStatic Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A 1.0ΩDYNAMIC CHARACTERISTICS Input Capacitance CISS 1400pF

VDS=25V, VGS=0V, f=1.0 MHzOutput Capacitance COSS 180pF

16 21pFReverse Transfer Capacitance CRSS

SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 70nsTurn-On Rise Time tR 170nsVDD =300V, ID =7.4A, RG =25Ω

(Note 1, 2) Turn-Off Delay Time tD(OFF) 140ns

130nsTurn-Off Fall Time tF

Total Gate Charge QG 29 38nC

VDS=480V, ID=7.4A, VGS=10 V

Gate-Source Charge QGS 7 nC

(Note 1, 2)

14.5 nCGate-Drain Charge QGD

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ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAXUNIT

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A 1.4V

Maximum Continuous Drain-Source Diode

IS 7.4A

Forward Current

Maximum Pulsed Drain-Source Diode

ISM 29.6A

Forward Current

VGS = 0V, IS = 7.4 A, Reverse Recovery Time tRR 320 nsdIF / dt = 100A/μs (Note 1) 2.4 μCReverse Recovery Charge QRR

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

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D.U.T.+VDS-+-LTEST CIRCUITS AND WAVEFORMS

RGDriverVGSSame Type as D.U.T.*dv/dt controlled by RG* ISD controlled by pulse period* D.U.T.-Device Under TestVDD

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS(Driver)

PeriodP.W.D=P. W.PeriodVGS=10VIFM, Body Diode Forward CurrentISD(D.U.T.)

IRMBody Diode Reverse Currentdi/dtBody Diode Recovery dv/dtVDS(D.U.T.)

VDDBody Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

L

VDSBVDSS

IASRGVDD

D.U.T.tptpTimeVDDID(t)VDS(t)10V

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

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TYPICAL CHARACTERISTICS

On-Region Characteristics

VGSTop: 15.0V 10.0V101 8.0V 7.0V 6.5V 6.0V Bottorm:5.5VTransfer Characteristics

Drain Current, ID(A)100

*Notes:1. 250µs Pulse Test2.TC=25°C100101Drain-Source Voltage, VDS(V)

Drain Current, ID (A)101

100

150°C25°C-55°CNotes:1. VDS=50V 2.250µs Pulse Test681010-110-110-124Gate-Source Voltage, VGS(V)

Drain-Source On-Resistance, RDS(ON) (Ω)

Capacitance (pF)ID, Drain Current (A)ReverseDrain Current, IDR(A)

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TYPICAL CHARACTERISTICS(Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice.

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