MITSUBISHI FLAT-BASE TYPEINSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAMWNVWN1WNFO1.5kVWNCVWPCWPWPFOVWP1VVNCVNVNFOVVN1VVPCVPVPFOVVP1VUNCUNUNFOVUN1VUPCUPUPFOVUP11.5k1.5k1.5k1.5k1.5kGndInFoVccGndInFoVccGndInFoVccGndInFoVccGndInFoVccGndInFoVccGndSiOutOTGndSiOutOTGndSiOutOTGndSiOutOTGndSiOutOTGndSiOutOTNWPNVPNUPMAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)INVERTER PARTSymbolVCES±IC±ICPPCTjParameterCollector-Emitter VoltageCollector CurrentCollector Current (Peak)Collector DissipationJunction TemperatureConditionVD = 15V, VCIN = 15VTC = 25°CTC = 25°CTC = 25°CRatings12004509002500–20 ~ +150UnitVAAW°C(Note-1)CONTROL PARTSymbolVDVCINVFOIFOParameterSupply VoltageInput VoltageFault Output Supply VoltageFault Output CurrentConditionApplied between :VUP1-VUPC, VVP1-VVPC, VWP1-VWPCVUN1-VUNC, VVN1-VVNC, VWN1-VWNCApplied between :UP-VUPC, VP-VVPC, WP-VWPCUN-VUNC, VN-VVNC, WN-VWNCApplied between :UPFO-VUPC, VPFO-VVPC, WPFO-VWPCUNFO-VUNC, VNFO-VVNC, WNFO-VWNCSink current at UPFO, VPFO, WPFO, UNFO, VNFO, WNFOterminalsRatings20202020UnitVVVmAJul. 2005 MITSUBISHI FLAT-BASE TYPEINSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge)Supply Voltage (Surge) Storage TemperatureTstg Isolation VoltageVisoSymbol Condition VD = 13.5 ~ 16.5V, Inverter Part,Tj = +125°C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings8001000–40 ~ +1252500 UnitVV°CVrms THERMAL RESISTANCES SymbolRth(j-c)QRth(j-c)FRth(c-f) Parameter Junction to case ThermalResistances Contact Thermal Resistance Condition Inverter IGBT (per 1 element)Inverter FWDi (per 1 element)Case to fin, (per 1 module)Thermal grease applied (Note-1) (Note-1) (Note-1) Min.——— LimitsTyp.——— Max.0.050.090.014 Unit °C/W (Note-1) Tc measurement point is just under the chip. If you use this value, Rth(f-a) should be measured just under the chips.Table 1: TC (under the chip) measurement point is below. arm axis XY UP IGBTFWDi30.119.282.782.7 VP IGBTFWDi80.169.282.782.7 WP IGBTFWDi130.1119.282.782.7 7(Unit : mm) UN IGBTFWDi19.830.727.227.2 13VN IGBTFWDi69.880.727.227.2WN IGBTFWDi119.8130.727.227.2 NameplatesideBottom viewYX61ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)INVERTER PART SymbolVCE(sat)VECtontrrtc(on)tofftc(off)ICES Parameter Collector-EmitterSaturation VoltageFWDi Forward Voltage Condition VD = 15V, IC = 450AVCIN = 0V (Fig. 1)–IC = 450A, VD = 15V, VCIN = 15VVD = 15V, VCIN = 0V↔15VVCC = 600V, IC = 450ATj = 125°CInductive LoadVCE = VCES, VCIN = 15V(Fig. 5) Tj = 25°CTj = 125°C (Fig. 2) Min.———0.5—————— LimitsTyp.1.81.92.81.00.50.42.30.7—— Max.2.32.43.92.50.81.03.51.2110 UnitVV Switching Time µs (Fig. 3, 4)Tj = 25°CTj = 125°C Collector-EmitterCutoff Current mA Jul. 2005 MITSUBISHI FLAT-BASE TYPEINSULATED PACKAGE CONTROL PART SymbolIDVth(ON)Vth(OFF)SCtoff(SC)OTOTrUVUVrIFO(H)IFO(L)tFO Parameter Circuit Current Input ON Threshold VoltageInput OFF Threshold VoltageShort Circuit Trip LevelShort Circuit Current DelayTime Over Temperature ProtectionSupply Circuit Under-VoltageProtection Fault Output CurrentMinimum Fault Output PulseWidth VD = 15V, VCIN = 15V Condition V*N1-V*NCV*P1-V*PC Min.——1.21.7900—135—11.5———1.0 LimitsTyp.20201.52.0—0.214512512.012.5—101.8 Max.27271.82.3————12.5—0.0115— UnitmAVAµs°CVmAms Applied between :UP-VUPC, VP-VVPC, WP-VWPC UN-VUNC, VN-VVNC, WN-VWNC –20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6)VD = 15V VD = 15V Detect Tj of IGBT chip–20 ≤ Tj ≤ 125°CVD = 15V, VFO = 15VVD = 15V (Fig. 3,6)Trip levelReset levelTrip levelReset level (Note-2)(Note-2) (Note-2)Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it. MECHANICAL RATINGS AND CHARACTERISTICS Symbol——— Parameter Mounting torqueMounting torqueWeight Main terminalMounting part —Condition screw : M6screw : M5 Min.3.52.5— LimitsTyp.4.03.01250 Max.4.53.5— UnitN • mN • mgRECOMMENDED CONDITIONS FOR USE SymbolVCCVDVCIN(ON)VCIN(OFF)fPWMtdead Parameter Supply VoltageControl Supply VoltageInput ON VoltageInput OFF VoltagePWM Input FrequencyArm Shoot-throughBlocking Time Condition Applied across P-N terminals Applied between :VUP1-VUPC, VVP1-VVPC, VWP1-VWPC VUN1-VUNC, VVN1-VVNC, VWN1-VWNC (Note-3) Applied between :UP-VUPC, VP-VVPC, WP-VWPC UN-VUNC, VN-VVNC, WN-VWNC Using Application Circuit of Fig. 8For IPM’s each input signals (Fig. 7) Recommended value ≤ 800 15±1.5≤ 0.8≥ 9.0≤ 20≥ 3.0 UnitVVVkHzµs (Note-3)With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak Jul. 2005 MITSUBISHI FLAT-BASE TYPEINSULATED PACKAGE PRECAUTIONS FOR TESTING1.Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corre-sponding supply voltage and each input signal should be kept off state.After this, the specified ON and OFF level setting for each input signal should be done.2.When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-lowed to rise above VCES rating of the device.(These test should not be done by using a curve tracer or its equivalent.)VCIN(0V)INFoVIcVCIN(15V)INFoV–IcVD (all)VD (all)Fig. 1 VCE(sat) TestFig. 2 VEC Test a) Lower Arm SwitchingVCIN(15V)VCINSignal input(Upper Arm)Signal input(Lower Arm) FoFotrrIrrCSVCEIc90%Vcc90%b) Upper Arm SwitchingVCINSignal input(Upper Arm)Signal input(Lower Arm) VD (all)FoIc10%10%tc(on)10%tc(off)10%VCINCSVcctd(on)trtd(off)tfVCIN(15V)Fo(ton= td(on) + tr)VD (all)Ic(toff= td(off) + tf)Fig. 3 Switching time and SC test circuitFig. 4 Switching time test waveformVCINShort Circuit CurrentP, (U,V,W)INFoAConstant CurrentSCPulseVCEVCIN(15V)IcVD (all)U,V,W, (N)Fotoff(SC)Fig. 5 ICES TestFig. 6 SC test waveformIPM’ input signal VCIN(Upper Arm)0VIPM’ input signal VCIN(Lower Arm)1.5V2V1.5Vt0V2V1.5V2Vttdeadtdeadtdead1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value Fig. 7 Dead time measurement point exampleJul. 2005 MITSUBISHI FLAT-BASE TYPEINSULATED PACKAGE 20k≥10µVUP1UPFOUPVUPC1.5k¡VccFoInVDOTOUTSiPIF+–UGNDGNDVccFoInGNDGNDVccFoInGNDGNDVccFoInGNDGNDVccFoInGNDGNDVccFoInGNDGNDOTOUTSiNWOTOUTSiPOTOUTSiNVOTOUTSiPOTOUTSiN≥0.1µVUN1UNFO1.5kVDUNVUNCVVP1VPFO1.5kVDVPVVPCVVN1VNFO1.5kMVDVNVVNCVWP1WPFO1.5kVDWPVWPCVWN1WNFO1.5kVDWNVWNC: Interface which is the same as the U-phaseFig. 8 Application Example CircuitNOTES FOR STABLE AND SAFE OPERATION ;Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize thestray capacity between the input and output wirings of opto-coupler.Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.Slow switching opto-coupler: CTR > 100%Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of thepower supply.Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and Nterminal.Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC lineand improve noise immunity of the system.•••••••Jul. 2005 MITSUBISHI FLAT-BASE TYPEINSULATED PACKAGE PERFORMANCE CURVESOUTPUT CHARACTERISTICS(TYPICAL)Tj = 25°CCOLLECTOR-EMITTER SATURATIONVOLTAGE (VS. Ic) CHARACTERISTICS(TYPICAL)400300200100013VCOLLECTOR-EMITTERSATURATION VOLTAGE VCE (sat) (V)500VD = 17V15V2.521.510.50VD = 15VCOLLECTOR CURRENT IC (A)Tj = 25°CTj = 125°C010020030040050000.511.522.5COLLECTOR-EMITTER VOLTAGE VCE (V)COLLECTOR CURRENT IC (A)COLLECTOR-EMITTERSATURATION VOLTAGE VCE (sat) (V)COLLECTOR-EMITTER SATURATIONVOLTAGE (VS. VD) CHARACTERISTICS(TYPICAL)2.5SWITCHING TIME CHARACTERISTICS(TYPICAL)101SWITCHING TIME tc(on), tc(off) (µs)275432VCC = 600VVD = 15V Tj = 25°C Tj = 125°CInductive loadtc(off)1.51007543210.5IC = 450A Tj = 25°C Tj = 125°C131415161718tc(on)10–11102345710223457103012CONTROL SUPPLY VOLTAGE VD (V)COLLECTOR CURRENT IC (A)SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)SWITCHING TIME CHARACTERISTICS(TYPICAL)10175432SWITCHING LOSS CHARACTERISTICS(TYPICAL)10275432ESW(off)ESW(on)SWITCHING TIME ton, toff (µs)toff10075432tonVCC = 600VVD = 15V Tj = 25°C Tj = 125°CInductive load23457102234571031017543210–1110100110VCC = 600VVD = 15V Tj = 25°C Tj = 125°CInductive load2345710223457103COLLECTOR CURRENT IC (A)COLLECTOR CURRENT IC (A)Jul. 2005 MITSUBISHI FLAT-BASE TYPEINSULATED PACKAGE COLLECTOR RECOVERY CURRENT –IC (A)DIODE FORWARD CHARACTERISTICS(TYPICAL)75432REVERSE RECOVERY TIME trr (µs)VD = 15VTj = 25°CTj = 125°C327543275432Irr327543210010210275432trr10–175 Tj = 25°C43 Tj = 125°C210110100.511.522.5310–2101Inductive load2345234571027103100EMITTER-COLLECTOR VOLTAGE VEC (V)COLLECTOR RECOVERY CURRENT –IC (A)ID VS. fc CHARACTERISTICS(TYPICAL)60NORMALIZED TRANSIENTTHERMAL IMPEDANCE Zth (j – c)CIRCUIT CURRENT ID (mA)TRANSIENT THERMALIMPEDANCE CHARACTERISTICS(IGBT PART)1007532P-side or N-sideVD = 15V50Tj = 25°C40302010010–1753210–20510152025Per unit base = Rth(j – c)Q = 0.05°C/W10–3–510235710–4235710–3235710–2235710–123571002357101TIME (s)753Single Pulse2CARRIER FREQUENCY fc (kHz)TRANSIENT THERMALIMPEDANCE CHARACTERISTICS(FWDi PART)100NORMALIZED TRANSIENTTHERMAL IMPEDANCE Zth (j – c)753210–1753210–2Per unit base = Rth(j – c)F = 0.09°C/W10–3–510235710–4235710–3235710–2235710–123571002357101TIME (s)753Single Pulse2REVERSE RECOVERY CURRENT lrr (A)103DIODE REVERSE RECOVERY CHARACTERISTICS(TYPICAL)1101037VCC = 600V755VD = 15V44Jul. 2005 因篇幅问题不能全部显示，请点此查看更多更全内容