专利名称：Efficient Protection Structure for Reverse
Pin-to-Pin Electrostatic Discharge
发明人：BRODSKY, Jonathan,STEINHOFF,
Robert,Pendharkar, Sameer P.
申请号：EP04101861.5申请日：20040430公开号：EP1473773A1公开日：20041103
专利附图：
摘要：An electrostatic discharge (ESD) protection structure for protecting against ESDevents between signal terminals is disclosed. ESD protection is provided in a first polarity,
by a bipolar transistor (4C) formed in an n-well (64; 164), having a collector contact (72;172) to one signal terminal (PIN1) and its emitter region (68; 168) and base (66; 166)connected to a second signal terminal (PIN2). For reverse polarity ESD protection, a diode(25) is formed in the same n-well (64; 164) by a p+ region (78; 178) connected to thesecond signal terminal (PIN2), serving as the anode. The cathode can correspond to then-well (64; 164) itself, as contacted by the collector contact (72; 172). By using the samen-well (64; 164) for both devices, the integrated circuit chip area required to implementthis pin-to-pin protection is much reduced.
申请人：TEXAS INSTRUMENTS INCORPORATED
地址：P.O. Box 655474, 13500 Central Expressway Dallas, TX 75265 US
国籍：US
代理机构：Holt, Michael
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