Nitride semiconductor device, nitride semiconducto

专利名称：Nitride semiconductor device, nitride

semiconductor wafer, and method formanufacturing nitride semiconductor layer

发明人：Shioda, Tomonari,Hung, Hung,Hwang,

Jongil,Sato, Taisuke,Sugiyama,Naoharu,Nunoue, Shinya

申请号：EP12152936.6申请日：20120127公开号：EP2525407A2公开日：20121121

专利附图：

摘要：According to one embodiment, a nitride semiconductor device (110, 111, 120)includes: a stacked foundation layer (50), and a functional layer (10s). The stackedfoundation layer (50) is formed on an AIN buffer layer (55) formed on a silicon substrate(40). The stacked foundation layer (50) includes AIN foundation layers (52) and GaNfoundation layers (51) being alternately stacked. The functional layer (10s) includes alow-concentration part (10l), and a high-concentration part (10h) provided on the low-concentration part (10l). A substrate-side GaN foundation layer (51 s) closest to thesilicon substrate (40) among the plurality of GaN foundation layers (51) includes firstportion (51a) and second portion (51b), and a third portion (51c) provided between thefirst and second portions (51a, 51b). The third portion (51c) has a Si concentration notless than 5 X 1018 cm-3 and has a thickness smaller than a sum of those of the first andsecond portions (51a, 51b).

申请人：Kabushiki Kaisha Toshiba

地址：1-1, Shibaura 1-Chome Minato-Ku Tokyo 105-8001 JP

国籍：JP

代理机构：Granleese, Rhian Jane

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