专利名称：Nitride semiconductor device, nitride
semiconductor wafer and method formanufacturing nitride semiconductor layer
发明人：Tomonari Shioda,Hung Hung,Jongil
Hwang,Taisuke Sato,NaoharuSugiyama,Shinya Nunoue
申请号：US13222561申请日：20110831公开号：US08525194B2公开日：20130903
专利附图：
摘要：According to one embodiment, a nitride semiconductor device includes afoundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundationlayer has a thickness not less than 1 micrometer and including GaN. The functional layeris provided on the foundation layer. The functional layer includes a first semiconductorlayer. The first semiconductor layer has an impurity concentration higher than an impurityconcentration in the foundation layer and includes GaN of a first conductivity type.
申请人：Tomonari Shioda,Hung Hung,Jongil Hwang,Taisuke Sato,NaoharuSugiyama,Shinya Nunoue
地址：Kanagawa-ken JP,Kanagawa-ken JP,Kanagawa-ken JP,Kanagawa-kenJP,Kanagawa-ken JP,Chiba-ken JP
国籍：JP,JP,JP,JP,JP,JP
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
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