Capacitors in integrated circuits

专利名称：Capacitors in integrated circuits发明人：HANS NORSTROM,STEFAN NYGREN申请号：AU7353098申请日：19980403公开号：AU7353098A公开日：19981124

摘要：The present invention relates to a method for, in the manufacturing of anintegrated circuit, producing a capacitor with metallic conducting electrodes and to thecapacitor itself and to the integrated circuit, which preferably are intended for high-frequency applications. According to the invention, a lower electrode (17,63,67) isproduced through depositing a first metal layer (15) onto a layer structure (11)comprising lowermost a substrate and uppermost an insulating layer (13). An insulatinglayer (19) is deposited over the first metal layer (15), whereafter an electrical connection(25) to the lower electrode (17,63,67) is produced by etching a via hole (21) through saidinsulating layer (19), which via hole (21) is plugged. There-after the first metal layer (15) isuncovered within a predetermined area (33), whereafter a dielectric layer (35) isdeposited, patterned and etched in such a way that it overlaps (39) said predeterminedarea (33). Finally, an upper electrode (47,63,67) and a connecting layer (43) are producedthrough a second metal layer (41) being deposited on the structure (40) achievedthereby, which second metal layer (41) is patterned and etched in such a way that theupper electrode (47,63,67) overlaps (49) said predetermined area (33) and the connectinglayer (43) overlaps the plugged via hole (21).

申请人：TELEFONAKTIEBOLAGET LM ERICSSON

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