Capacitor for a semiconductor device

专利名称：Capacitor for a semiconductor device发明人：Ihn-Gee Baik申请号：US11593007申请日：20061106

公开号：US200700597A1公开日：20070315

专利附图：

摘要：In a method for forming a photoresist pattern, a method for forming acapacitor, and a capacitor manufactured using the same, a light is selectively irradiatedonto a selected portion of a photoresist film formed on a substrate. An interfered lightgenerated from the irradiated light is transmitted through other portions of the

photoresist film except a ring-shaped portion of the photoresist film having a

predetermined width along a boundary of the selected portion. The photoresist film isexposed using the interfered light and the light irradiated onto the selected portion. Acylindrical photoresist pattern having a minute width may be formed through developingthe photoresist film. With the cylindrical pattern, the capacitor can be easily formed.

申请人：Ihn-Gee Baik

地址：Sungnam-city KR

国籍：KR

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