Dual damascene process for carbon-based low-K mate

专利名称：Dual damascene process for carbon-based

low-K materials

发明人：Chao-Cheng Chen,Ming-Huei Lui,Jen-Cheng

Liu,Li-chih Chao,Chia-Shiung Tsai

申请号：US09431536申请日：19991029公开号：US06211061B1公开日：20010403

专利附图：

摘要：A method for forming a dual damascene structure in a carbon-based, low-Kmaterial. The process begins by providing a semiconductor structure having a first metal

pattern thereover, wherein the first metal pattern has a first barrier layer thereon. Anorganic dielectric layer is formed on the first barrier layer, and a hard mask layer isformed on the dielectric layer. The hard mask layer and the dielectric layer are patternedto form a trench. A second barrier layer is formed over the hard mask layer and on thebottom and sidewalls of the trench. A barc layer is formed over the second barrier layer,thereby filling the trench. The barc layer, the second barrier layer, and the dielectric layerare patterned to form a via opening, preferably using a photoresist mask. The barc layeris patterned without faceting the edges of the via opening due to the second barrierlayer. The barc layer and the etch mask are removed by the dielectric layer etch. The firstbarrier layer and the second barrier layer are removed. A third barrier layer is formed onthe bottom and sidewalls of the trench, on the sidewalls of the via opening, and on thefirst metal pattern through the via opening. The trench and the via opening are filled withmetal to form a damascene structure.

申请人：TAIWAN SEMICONDUCTOR MANUFACTUIRNG COMPANY

代理人：George O. Saile,Stephen B. Ackerman,William J. Stoffel

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