Logic integrated circuit device formed on compound

专利名称：Logic integrated circuit device formed on

compound semiconductor substrate

发明人：Hiromitsu Hirayama申请号：US06/8584申请日：19860502公开号：US04743957A公开日：19880510

摘要：A gallium arsenide integrated circuit device compatible with a silicon emitter-coupled logic device includes a plurality of transistors constituting an logic circuit and anoutput transistor driving an externally provided load in response to an output of thelogic circuit. The output transistor has its threshold voltage that is larger in absolutevalue than the threshold voltages of the remaining transistor, so that an output signalhaving the ECL level is produced without sacrificing a power consumption and asemiconductor chip area.

申请人：NEC CORPORATION

代理机构：Sughrue, Mion, Zinn, Macpeak & Seas

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