HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBTMarch 2005HGTP2N120CN, HGT1S2N120CN13A, 1200V, NPT Series N-Channel IGBTFeatures•13A, 1200V, TC = 25°C•1200V Switching SOA Capability•Typical Fall Time 360ns at TJ = 150°C•Short Circuit Rating•Low Conduction Loss•Avalanche Rated•Temperature Compensating SABER™ ModelThermal Impedance SPICE Modelwww.fairchildsemi.com•Related Literature•TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”DescriptionThe HGTP2N120CN and HGT1S2N120CN are Non-PunchThrough (NPT) IGBT designs. They are new members of theMOS gated high voltage switching IGBT family. IGBTs combinethe best features of MOSFETs and bipolar transistors. Thisdevice has the high input impedance of a MOSFET and the lowon-state conduction loss of a bipolar transistor.The IGBT is ideal for many high voltage switching applicationsoperating at moderate frequencies where low conduction lossesare essential, such as: AC and DC motor controls, power sup-plies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49313Ordering InformationsPart NumberHGTP2N120CNHGT1S2N120CNPackageTO-220ABTO-262Brand2N120CN2N120CNNote: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A.COLLECTOR(FLANGE)ECCGECGGCOLLECTOR(FLANGE)TO-220TO-262EFAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS4,364,0734,598,4614,682,1954,803,5334,888,6274,417,3854,605,9484,684,4134,809,0454,890,1434,430,7924,620,2114,694,3134,809,0474,901,1274,443,9314,631,5644,717,6794,810,6654,904,6094,466,1764,639,7544,743,9524,823,1764,933,7404,516,1434,639,7624,783,6904,837,6064,963,9514,532,5344,641,1624,794,4324,860,0804,969,0274,587,7134,644,6374,801,9864,883,767©2005 Fairchild Semiconductor Corporation1www.fairchildsemi.comHGTP2N120CN, HGT1S2N120CN Rev. C元器件交易网www.cecb2b.com
HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBTAbsolute Maximum Ratings T = 25°C, Unless Otherwise SpecifiedCSymbolBVCESIC25IC110ICMVGESVGEMSSOAPDEAVtJ, TSTGTLTPKGtSCParameterCollector to Emitter VoltageCollector Current ContinuousAt TC = 25°CAt TC = 110°CCollector Current Pulsed (Note 1)Gate to Emitter Voltage ContinuousGate to Emitter Voltage PulsedSwitching SOA Operating Area at TJ = 150°C (Figure 2)Power Dissipation Total at TC = 25°CPower Dissipation Derating TC > 25°CForward Voltage Avalanche Energy (Note 2)Operating and Storage Junction Temperature RangeMaximum Lead Temperature for SolderingLeads at 0.063in (1.6mm) from Case for 10sPackage Body for 10s, see Tech Brief 334Short Circuit Withstand Time (Note 3) at VGE = 15VHGTP2N120CNHGT1S2N120CN120013720±20±3013A at 1200V1040.8318-55 to 1503002608UnitsVAAAVVWW/°CmJ°C°C°CµsCAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device atthese or any other conditions above those indicated in the operational sections of this specification is not implied.Notes:1. Pulse width limited by maximum junction temperature.2. ICE = 3A, L = 4mH3. VCE(PK) = 840V, TJ = 125°C, RG = 51Ω.Electrical Characteristics T = 25°C unless otherwise notedCSymbolBVCESBVECSICESParameterCollector to Emitter Breakdown VoltageEmitter to Collector Breakdown VoltageCollector to Emitter Leakage CurrentTest ConditionsIC = 250µA, VGE = 0VIC = 10mA, VGE = 0VVCE = 1200VTJ = 25°CTJ = 125°CTJ = 150°CMin.120015-----6.4-13---Typ.---100-2.052.756.7--10.23036Max.Units--100-1.02.403.50-±250--3643VVµAµAmAVVVnAAVnCnCVCE(SAT)VGE(TH)IGESSSOAVGEPQg(ON)Collector to Emitter Saturation VoltageGate to Emitter Threshold VoltageGate to Emitter Leakage CurrentSwitching SOAGate to Emitter Plateau VoltageOn-State Gate ChargeIC = 2.6A,VGE = 15VTJ = 25°CTJ = 150°CIC = 45µA, VCE = VGEVGE = ±20VTJ = 150°C, RG = 51Ω, VGE = 15VL = 5mH, VCE(PK) = 1200VIC = 2.6A, VCE = 600VIC = 2.6A,VCE = 600VVGE = 15VVGE = 20VHGTP2N120CN, HGT1S2N120CN Rev. C2www.fairchildsemi.com元器件交易网www.cecb2b.com
HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBTElectrical Characteristics T = 25°C unless otherwise noted (Continued)CSymboltd(ON)ltrltd(OFF)ltflEON1EON2EOFFtd(ON)ltrltd(OFF)ltflEON1EON2EOFFRθJCNotes:ParameterCurrent Trun-On Delay TimeCurrent Rise TimeCurent Turn-Off Delay TimeCurrent Fall TimeTurn-On Energy (Note 4)Turn-On Energy (Note 4)Turn-Off Energy (Note 5)Curent Turn-On Delay TimeCurrent Rise TimeCurent Turn-Off Delay TimeCurrent Fall TimeTurn-On Energy (Note 4)Turn-On Energy (Note 4)Turn-Off Energy (Note 5)Thermal Resistance Junction to CaseTest ConditionsIGBT and Diode at TJ = 25°CICE = 2.6AVCE = 960VVGE = 15VRG = 51ΩL = 5mHTest Circuit (Figure 18)Min.-------Typ.251120526096425355211122536096800530-Max.Units3015220320-5903902515240420-11005801.20nsnsnsnsµJµJµJnsnsnsnsµJµJµJ°C/WIGBT and Diode at TJ = 150°CICE = 2.6AVCE = 960VVGE = 15VRG = 51ΩL = 5mHTest Circuit (Figure 18)--------4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typicaldiode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure18.5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collectorcurrent equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test methodproduces the true total Turn-Off Energy Loss.HGTP2N120CN, HGT1S2N120CN Rev. C3www.fairchildsemi.com元器件交易网www.cecb2b.com
HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBTTypical Performance CharacteristicsFigure 1. DC Collector Current vs Case Temperature14ICE, DC COLLECTOR CURRENT (A)VGE = 15V121086420Figure 2. Minimum Switching Safe OperatingAreaICE, COLLECTOR TO EMITTER CURRENT (A)16141210864200200400600800100012001400TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH255075100o125150TC, CASE TEMPERATURE (C)VCE, COLLECTOR TO EMITTER VOLTAGE (V)Figure 3. Operating Frequency vs Collector toEmitter Currentl200fMAX, OPERATING FREQUENCY (kHz)TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mHTC = 75oC,VGE = 15V IDEAL DIODETCVGE75oC15V75oC12VFigure 4. Short Circuit Withstand TimetSC, SHORT CIRCUIT WITHSTAND TIME (µs)50VCE = 840V, RG = 51Ω, TJ = 125C4040o10050303020ISC10tSC2010fMAX1 = 0.05 / (td(OFF)I + td(ON)I)fMAX2 = (PD - PC) / (EON2 + EOFF)PC = CONDUCTION DISSIPATION(DUTY FACTOR = 50%)RØJC = 1.2oC/W, SEE NOTES1TCVGE 110oC15V110oC12V510234ICE, COLLECTOR TO EMITTER CURRENT (A)01011121314150VGE, GATE TO EMITTER VOLTAGE (V)Figure 5. Collector to Emitter On-State Voltage ICE, COLLECTOR TO EMITTER CURRENT (A)10Figure 6. Collector to Emitter On-State VoltageICE, COLLECTOR TO EMITTER CURRENT (A)10DUTY CYCLE <0.5%, VGE = 15V250µs PULSE TEST8TC = -55oCTC = 25oC8TC = 25oC6TC = -55oC4TC = 150C2DUTY CYCLE <0.5%, VGE = 12V250µS PULSE TEST00123456o6TC = 150oC420012345VCE, COLLECTOR TO EMITTER VOLTAGE (V)VCE, COLLECTOR TO EMITTER VOLTAGE (V)HGTP2N120CN, HGT1S2N120CN Rev. C4www.fairchildsemi.comISC, PEAK SHORT CIRCUIT CURRENT (A)50元器件交易网www.cecb2b.com
HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBTTypical Performance Characteristics (Continued)Figure 7. Turn-On Energy Loss vs Collector toEmitter Current2000EOFF, TURN-OFF ENERGY LOSS (µJ)EON2, TURN-ON ENERGY LOSS (µJ) RG = 51Ω, L = 5mH, VCE = 960V1500Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current900 RG = 51Ω, L = 5mH, VCE = 960V8007006005004003002001001.01.52.02.53.03.54.04.55.0TJ = 25oC, VGE = 12V OR 15VTJ = 150oC, VGE = 12V OR 15VTJ = 150oC, VGE = 12V, VGE = 15V1000500TJ = 25oC, VGE = 12V, VGE = 15V01.01.52.02.53.03.54.04.55.0ICE, COLLECTOR TO EMITTER CURRENT (A)ICE, COLLECTOR TO EMITTER CURRENT (A)Figure 9. Turn_On Delay Time vs Collector toEmitter Current45tdI,TURN-ON DELAY TIME(ns) RG = 51Ω, L = 5mH, VCE = 960V4035302520TJ = 25oC, TJ = 150oC, VGE = 15V151.01.52.02.53.03.54.04.55.0Figure 10. Turn-On Rise Time vs Collector to Emitter Current4035trI,RISE TIME(ns)3025201510501.01.52.0TJ = 25oC, TJ = 150oC, VGE = 15V RG = 51Ω, L = 5mH, VCE = 960VTJ = 25oC, TJ = 150oC, VGE = 12V TJ = 25C, TJ = 150C, VGE = 12Voo2.53.03.54.04.55.0ICE, COLLECTOR TO EMITTER CURRENT (A)ICE, COLLECTOR TO EMITTER CURRENT (A)Figure 11. Turn-Off Delay Time vs Collector toEmitter Current 400td(OFF)I, TURN-OFF DELAY TIME(ns)RG = 51Ω, L = 5mH, VCE = 960V350Figure 12. Fall Time vs Collector to EmitterCurrent700RG = 51Ω, L = 5mH, VCE = 960V600tfI, FALL TIME(ns)VGE = 12V, VGE = 15V, TJ = 150C300250200150VGE = 12V, VGE = 15V, TJ = 25C1001.01.52.02.53.03.54.04.55.0oo500400300200TJ = 150oC, VGE = 12V OR 15VTJ = 25oC, VGE = 12V OR 15V1001.01.52.02.53.03.54.04.55.0ICE, COLLECTOR TO EMITTER CURRENT (A)ICE, COLLECTOR TO EMITTER CURRENT (A)HGTP2N120CN, HGT1S2N120CN Rev. C5www.fairchildsemi.com元器件交易网www.cecb2b.com
HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBTTypical Performance Characteristics (Continued)Figure 13. Transfer CharacteristicICE, COLLECTOR TO EMITTER CURRENT (A)40353025201510507TC = 25oC891011TC = -55oCDUTY CYCLE <0.5%, VCE = 20V250µS PULSE TESTFigure 14. Gate Charage Waveforms 16VGE, GATE TO EMITTER VOLTAGE (V)14121086420051015202530VCE = 400VVCE = 800VVCE = 1200VIG(REF) = 1mA, RL = 260Ω, TC = 25oCTC = 150C12131415oVGE, GATE TO EMITTER VOLTAGE (V)QG, GATE CHARGE (nC)Figure 15. Capacitance vs Collector to Emitter2.0FREQUENCY = 1MHzC, CAPACITANCE (nF)1.5CIES1.0Figure 16. Collector to Emitter On-Sate Voltage ICE, COLLECTOR TO EMITTER CURRENT (A)5DUTY CYCLE <0.5%, TC = 110oC250µs PULSE TEST4VGE = 15V3VGE = 10V20.5COESCRES0510152025VCE, COLLECTOR TO EMITTER VOLTAGE (V)10000.51.01.52.02.53.03.5VCE, COLLECTOR TO EMITTER VOLTAGE (V)Figure 17. Normalized Transient Thermal Response, Junction to CaseZθJC,NORMALIZED THERMAL RESPONSE1000.50.20.110-10.050.02PDt1t2SINGLE PULSE10-410-3DUTY FACTOR, D = t1 / t2PEAK TJ = (PD X ZθJC X RθJC) + TC10-210-11000.0110-210-5t1,RECTANGULAR PULSE DURATION (s)HGTP2N120CN, HGT1S2N120CN Rev. C6www.fairchildsemi.com元器件交易网www.cecb2b.com
HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBTTest Circuit and Waveforms (Continued)Figure 18. Inductive Switching Test CircuitRHRD4120Figure 19. Switching Test Waveforms 90%VGEEOFFVCE+90%VDD = 960V ICE10%td(OFF)ItfItrItd(ON)I10%EON2L = 5mHRG = 51Ω-HGTP2N120CN, HGT1S2N120CN Rev. C7www.fairchildsemi.com元器件交易网www.cecb2b.com
HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBTHandling Precautions for IGBTsInsulated Gate Bipolar Transistors are susceptible to gate-insu-lation damage by the electrostatic discharge of energy throughthe devices. When handling these devices, care should be exer-cised to assure that the static charge built in the handler’s bodycapacitance is not discharged through the device. With properhandling and application procedures, however, IGBTs are cur-rently being extensively used in production by numerous equip-ment manufacturers in military, industrial and consumerapplications, with virtually no damage problems due to electro-static discharge. IGBTs can be handled safely if the followingbasic precautions are taken:1. Prior to assembly into a circuit, all leads should be keptshorted together either by the use of metal shorting springsor by the insertion into conductive material such as“ECCOSORBD™ LD26” or equivalent.2. When devices are removed by hand from their carriers, thehand being used should be grounded by any suitable means- for example, with a metallic wristband.3. Tips of soldering irons should be grounded.4. Devices should never be inserted into or removed from cir-cuits with power on.5. Gate Voltage Rating - Never exceed the gate-voltage ratingof VGEM. Exceeding the rated VGE can result in permanentdamage to the oxide layer in the gate region.6. Gate Termination - The gates of these devices are essen-tially capacitors. Circuits that leave the gate open-circuited orfloating should be avoided. These conditions can result inturn-on of the device due to voltage buildup on the inputcapacitor due to leakage currents or pickup.7. Gate Protection - These devices do not have an internalmonolithic Zener diode from gate to emitter. If gate protectionis required, an external Zener is recommended.Operating Frequency InformationOperating frequency information for a typical device (Figure 3)is presented as a guide for estimating device performance for aspecific application. Other typical frequency vs collector current(ICE) plots are possible using the information shown for a typicalunit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot(Figure 3) of a typical device shows fMAX1 or fMAX2; whichever issmaller at each point. The information is based on measure-ments of a typical device and is bounded by the maximum ratedjunction temperature.fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime(the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible.td(OFF)I and td(ON)I are defined in Figure 19. Device turn-offdelay can establish an additional frequency limiting condition foran application other than TJM. td(OFF)I is important when control-ling output ripple under a lightly loaded condition.fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowabledissipation (PD) is defined by PD=(TJM-TC)/RθJC. The sum ofdevice switching and conduction losses must not exceed PD.A 50% duty factor was used (Figure 3) and the conductionlosses (PC) are approximated by PC=(VCEx ICE)/2.EON2 and EOFF are defined in the switching waveforms shownin Figure 19. EON2 is the integral of the instantaneous powerloss (ICE x VCE) during turn-on and EOFF is the integral of theinstantaneous power loss (ICExVCE) during turn-off. All taillosses are included in the calculation for EOFF; i.e., the collec-tor current equals zero (ICE = 0).HGTP2N120CN, HGT1S2N120CN Rev. C8www.fairchildsemi.com元器件交易网www.cecb2b.com
HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBTTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended tobe an exhaustive list of all such trademarks.ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™FACT Quiet Series™FAST®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I2C™i-Lo™ImpliedDisconnect™Across the board. Around the world.™The Power Franchise®Programmable Active Droop™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench®QFET®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic®TINYOPTO™TruTranslation™UHC™UltraFET®UniFET™VCX™DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES ITCONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES ORSYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) supportor sustain life, or (c) whose failure to perform when properly usedin accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant injury to theuser.2. A critical component is any component of a life support deviceor system whose failure to perform can be reasonably expectedto cause the failure of the life support device or system, or toaffect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationAdvance InformationProduct StatusFormative or In DesignFirst ProductionDefinitionThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.PreliminaryNo Identification NeededFull ProductionObsoleteNot In ProductionRev. I159HGTP2N120CN, HGT1S2N120CN Rev. Cwww.fairchildsemi.com
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