AON740230V N-Channel MOSFETGeneral DescriptionThe AON7402 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.This device is suitable for high side switch in SMPS andgeneral purpose applications.Product SummaryVDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)30V20A< 10mΩ< 15mΩ100% UIS Tested!100% Rg Tested!DFN 3x3Top View Bottom View1234Top View8765DPin 1GSAbsolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolDrain-Source VoltageVDSGate-Source VoltageContinuous DrainCurrent GPulsed Drain Current Continuous DrainCurrentAvalanche Current CRepetitive avalanche energy L=0.1mH TC=25°CPower Dissipation BCCMaximum30±2020168013.510.8202027113.12-55 to 150UnitsVVAVGSTC=25°CTC=100°CTA=25°CTA=70°CIDIDMIDSMIAREARPDPDSMTJ, TSTGAAmJWW°CTC=100°CTA=25°CTA=70°CPower Dissipation AJunction and Storage Temperature RangeThermal CharacteristicsParameterMaximum Junction-to-Ambient AMaximum Junction-to-Ambient A DMaximum Junction-to-CaseSymbolt ≤ 10sSteady-StateSteady-StateRθJARθJCTyp30604Max40754.5Units°C/W°C/W°C/W Rev 2: June 2009 www.aosmd.comPage 1 of 6 AON7402 Electrical Characteristics (TJ=25°C unless otherwise noted)SymbolParameterConditionsID=250µA, VGS=0VVDS=30V, VGS=0VTJ=55°CVDS=0V, VGS= ±20VVDS=VGS ID=250µAVGS=10V, VDS=5VVGS=10V, ID=20ARDS(ON)gFSVSDISStatic Drain-Source On-ResistanceVGS=4.5V, ID=20AForward TransconductanceDiode Forward VoltageVDS=5V, ID=20AIS=1A,VGS=0VTJ=125°C1.2808.61312.1430.7125620VGS=0V, VDS=15V, f=1MHzVGS=0V, VDS=0V, f=1MHz170450.411.8VGS=10V, VDS=15V, ID=20A5.71.71.8VGS=10V, VDS=15V, RL=0.75Ω,RGEN=3ΩIF=20A, dI/dt=500A/µs2Min30TypMaxUnitsVSTATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSSVGS(th)ID(ON)Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain current15±1001.72.2101615VAmΩmΩSVApFpFpFΩnCnCnCnCnsnsnsns1328nsnCµAMaximum Body-Diode Continuous Current770240770.814.87.12.23.1531839181123DYNAMIC PARAMETERSCissInput CapacitanceCossCrssRgOutput CapacitanceReverse Transfer CapacitanceGate resistance9203101101.417.88.52.64.3SWITCHING PARAMETERSQg(10V)Total Gate ChargeQg(4.5V)Total Gate ChargeQgsQgdtD(on)trtD(off)tftrrQrrGate Source ChargeGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall TimeBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF=20A, dI/dt=500A/µsA. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ThePower dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application dependson the user's specific board design.B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upperdissipation limit for cases where additional heatsinking is used.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keepinitial TJ =25°C.D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,C. The SOA curve provides a single pulse rating.assuming a maximum junction temperature of TJ(MAX)=150°G. The maximum current rating is limited by bond-wires.H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: June 2009 www.aosmd.comPage 2 of 6 AON7402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS8010V606V4.5V4VID(A)605040302020VGS=3V0012345VDS (Volts)Fig 1: On-Region Characteristics (Note E)1614VGS=4.5VRDS(ON) (mΩ)12108VGS=10V6415202530ID (A)Figure 3: On-Resistance vs. Drain Current and GateVoltage (Note E)0510Normalized On-Resistance100012345VGS(Volts)Figure 2: Transfer Characteristics (Note E)1.81.61.41.210.80255075100125150175VGS=10VID=20A125°C25°CVDS=5VID (A)403.5V175VGS=4.5V2ID=20A100Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature18(Note E)1.0E+0230ID=20A2520151050246810VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage(Note E)25°C125°CIS (A)1.0E+011.0E+001.0E-011.0E-021.0E-031.0E-041.0E-050.00.20.40.60.81.01.2VSD (Volts)Figure 6: Body-Diode Characteristics (Note E)125°C25°C40 Rev 2: June 2009 RDS(ON) (mΩ)www.aosmd.comPage 3 of 6 AON7402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS10VDS=15VID=20ACapacitance (pF)12001000Ciss8006004002000028101214Qg (nC)Figure 7: Gate-Charge Characteristics46160Crss152025VDS (Volts)Figure 8: Capacitance Characteristics51030Coss8VGS (Volts)64201000.0100.0ID (Amps)10.01.00.10.00.010.11VDS (Volts)1010010µsPower (W)200160120804000.0001RDS(ON)limited10µs100µs1ms10msTJ(Max)=150°CTC=25°CDCTJ(Max)=150°CTC=25°C175210Figure 9: Maximum Forward Biased SafeOperating Area (Note F)10ZθJC Normalized TransientThermal Resistance0Pulse Width (s)18Figure 10: Single Pulse Power Rating Junction-to-Case (Note F)0.0010.010.1110D=Ton/TTJ,PK=TC+PDM.ZθJC.RθJCRθJC=4.5°C/WIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse4010.1PDTonSingle PulseT0.010.000010.00010.0010.010.1110100Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: June 2009 www.aosmd.comPage 4 of 6 AON7402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS100IAR (A) Peak Avalanche CurrentTA=25°CPower Dissipation (W)8060402000.0000010.000010.00010.001Time in avalanche, tA (s)Figure 12: Single Pulse Avalanche capability (NoteC)TA=125°CTA=100°C25201510500255075100125150TCASE (°C)Figure 13: Power De-rating (Note F)30TA=150°C2520Current rating ID(A)10000TA=25°C1000Power (W)1510500255075100125150TCASE (°C)Figure 14: Current De-rating (Note F)1001017521010.000010.0010.1101000Pulse Width (s)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)01810ZθJA Normalized TransientThermal ResistanceD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=75°C/WIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse1400.1PDSingle PulseTon0.0010.000010.00010.0010.010.11101001000Pulse Width (s)Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)T0.01 Rev 2: June 2009 www.aosmd.comPage 5 of 6 AON7402 Gate Charge Test Circuit & WaveformVgsQg+VDC10VVDC-DUTVgsIg+Vds-QgsQgdChargeResistive Switching Test Circuit & WaveformsRLVdsVdsVgsRgVgsDUTVDC+Vdd-Vgstd(on)tontrtd(off)tofftf90%10%Unclamped Inductive Switching (UIS) Test Circuit & WaveformsLVdsIdVgsRgDUTVgsVgsVgsVDCE = 1/2 LIARARVds2BVDSS+Vdd-IdIARDiode Recovery Test Circuit & WaveformsVds +DUTVgstrrQ = - IdtrrVds -IsdVgsLIsdIFVDC+Vdd-VdsdI/dtIRMVddIg Rev 2: June 2009 www.aosmd.comPage 6 of 6
