专利名称：Method of making a silicon-on-insulator
transistor
发明人：Lorenzo Faraone申请号：US06/863432申请日：19860515公开号：US04755481A公开日：19880705
摘要：A silicon-on-insulator (SOI) device is fabricated by forming at least one island ofsemiconductor material on a surface of an insulating material. Silicon is then formed onthe areas which surround the at least one island. The silicon is oxidized to form silicondioxide regions which surround the at least one island.
申请人：GENERAL ELECTRIC COMPANY
代理人：Bernard F. Plantz,James M. Trygg,Allen LeRoy Limberg
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