专利名称：High-speed electro-absorption modulator
with low drive voltage
发明人：Jin-Wei Shi,Chen-An Hsieh申请号：US10967161申请日：20041019公开号：US07102807B2公开日：20060905
专利附图：
摘要：The present invention is an electro-absorption modulator with a p-i-n-i-n epitaxylayer whose structure is p-i(MQW)-n-i(collector)-n to release the trade-off between theoperation voltage and the speed, to increase the confinement factor of the light in the
un-doped layers, and to reduce the insertion loss caused by the free-carrier absorption inthe doped layers, wherein MQW stands for Multiple-Quantum Well.
申请人：Jin-Wei Shi,Chen-An Hsieh
地址：Taipei TW,Jhongli TW
国籍：TW,TW
代理机构：Troxell Law Office PLLC
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