IXTH88N30P资料

PolarHTTM

Power MOSFET

N-Channel Enhancement ModePreliminary Data Sheet

IXTH 88N30PIXTT 88N30P

RDS(on)

VDSS = 300 VID25 = 88 A = 40 mΩ

SymbolVDSSVDGRVGSMID25ID(RMS)IDMIAREAREASdv/dtPDTJTJMTstgTLMdWeight

Test Conditions

TJ= 25°C to 150°C

TJ= 25°C to 150°C; RGS = 1 MΩ

Maximum Ratings

300300±20

VVVAAAAmJJV/nsW°C°C°C°C

TO-247 (IXTH)

D (TAB)TC= 25°C

External lead current limit

TC= 25°C, pulse width limited by TJMTC= 25°CTC= 25°CTC= 25°C

IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,TJ≤ 150°C, RG = 4 ΩTC= 25°C

887522060602.010600

-55 ... +150

150

-55 ... +150

TO-268 (IXTT)

G

S

D (TAB)

G = GateS = SourceD = DrainTAB = Drain

Features

zz

1.6 mm (0.062 in.) from case for 10 sMounting torqueTO-247TO-2TO-268

300

1.13/10Nm/lb.in.

6105

ggg

z

International standard packages

Unclamped Inductive Switching (UIS)rated

Low package inductance-easy to drive and to protect

Advantages

SymbolTest Conditions

(TJ = 25°C, unless otherwise specified)VDSSVGS(th)IGSSIDSSRDS(on)

VGS= 0 V, ID = 250 µAVDS= VGS, ID = 250µAVGS= ±20 VDC, VDS = 0VDS= VDSS VGS= 0 V

TJ = 125°C

Characteristic Values Min. Typ.Max.3002.5

5.0±10025

25040

VVnAµAµAmΩ

zzz

Easy to mountSpace savingsHigh power density

VGS= 10 V, ID = 0.5 ID25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

PolarHTTM DMOS transistorsutilize proprietary designs andprocess. US patent is pending.

DS99129A(01/04)

© 2004 IXYS All rights reserved

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IXTH 88N30P IXTT 88N30PSymbolTest Conditions Characteristic Values (TJ = 25°C, unless otherwise specified)Min.Typ.Max.VDS= 10 V; ID = 0.5 ID25, pulse testVGS = 0 V, VDS = 25 V, f = 1 MHz4050630095019025VGS = 10 V, VDS = 0.5 VDSS, ID = 60 ARG = 3.3 Ω (External)249625180VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID2490SpFpFpFnsnsnsnsnCnCnC0.21K/W(TO-247)(TO-2)0.210.15K/WK/WDim.MillimeterMin.Max.A4.75.32.22.A1A22.22.6b1.01.4b11.652.13b22.873.12C.4.8D20.8021.46E15.7516.26e5.205.72L19.8120.32L14.50∅P3.553.65Q5.6.40R4.325.49S6.15BSCInchesMin.Max..185.209.087.102.059.098.040.055.065.084.113.123.016.031.819.845.610.00.2050.225.780.800.177.140.1440.2320.252.170.216242BSC 1 2 3 TO-247 AD OutlinegfsCissCossCrsstd(on)trtd(off)tfQg(on)QgsQgdRthJCRthCKSource-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified)SymbolTest ConditionsMin.typ.Max.ISISMVSDtrrQRMVGS = 0 VRepetitiveIF = IS, VGS = 0 V,Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %IF = 25 A-di/dt = 100 A/µsVR = 100 V2503.3882201.5AAVnsµC TO-268 OutlineIXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B14,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343元器件交易网www.cecb2b.com

IXTH 88N30PIXTT 88N30PFig. 1. Output Characteristics @ 25ºC908070VGS = 10V 9V 8V200180160140VGS = 10V 9V8VFig. 2. Extended Output Characteristics @ 25ºCI D - AmperesI D - Amperes6050403020105V000.511.522.533.6V7V120100806040205V0024681012141618206V7VVD S - VoltsFig. 3. Output Characteristics @ 125ºC908070VGS = 10V 9V 8V32.82.62.42.221.81.61.41.210.80.60.401234567-50-250VGS = 10VVD S - VoltsFig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction TemperatureI D - Amperes60504030201007VR D S (on) - NormalizedID = 88AID = 44A6V5V255075100125150VD S - VoltsFig. 5. RDS(on) Normalized to 3.43.232.82.42.221.81.61.41.210.8020406080100120140160180200TJ = 25ºCTJ - Degrees CentigradeFig. 6. Drain Current vs. CaseTemperature10090800.5 ID25 Value vs. IDVGS = 10VR D S (on) - NormalizedI D - Amperes2.6TJ = 125ºC706050403020100-50-250255075100125150I D - AmperesTC - Degrees Centigrade© 2004 IXYS All rights reserved

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IXTH 88N30PIXTT 88N30PFig. 7. Input Admittance16014012010080604020044.555.566.577.58 TJ = 125ºC 25ºC -40ºC1009080TJ = -40ºC 25ºC 125ºCFig. 8. Transconductance g f s - Siemens7060504030201000I D - Amperes20406080100120140160180VG S - VoltsFig. 9. Source Current vs. Source-To-Drain Voltage2802402001098VDS = 150VID = 44AIG = 10mAI D - AmperesFig. 10. Gate ChargeI S - Amperes7VG S - VoltsTJ = 125ºCTJ = 25ºC160120804000.40.60.811.21.41.663210020406080100120140160180VS D - VoltsQ G - nanoCoulombsFig. 12. Forward-Bias Safe Operating Area 1000TJ = 150ºCRDS(on) LimitTC = 25ºC25µsFig. 11. Capacitance10000Capacitance - picoFaradsCissI D - Amperes1001ms10ms10DC100µs1000Cossf = 1MHzCrss100051015202530301101001000VD S - VoltsIXYS reserves the right to change limits, test conditions, and dimensions.VD S - Volts元器件交易网www.cecb2b.com

IXTH 88N30PIXTT 88N30PFig. 13. Maximum Transient Thermal Resistance1.00R(th) J C - ºC / W0.10 0.011101001000Pulse Width - milliseconds© 2004 IXYS All rights reserved