Composite base including sintered base and base su

专利名称：Composite base including sintered base and

base surface flattening layer, and compositesubstrate including that composite base andsemiconductor crystalline layer

发明人：Yuki Seki,Issei Satoh,Koji Uematsu,Yoshiyuki

Yamamoto

申请号：US13107241申请日：20110513公开号：US09184228B2公开日：20151110

专利附图：

摘要：A composite base of the present invention includes a sintered base and a basesurface flattening layer disposed on the sintered base, and the base surface flatteninglayer has a surface RMS roughness of not more than 1.0 nm. A composite substrate ofthe present invention includes the composite base and a semiconductor crystal layerdisposed on a side of the composite base where the base surface flattening layer is

located, and a difference between a thermal expansion coefficient of the sintered baseand a thermal expansion coefficient of the semiconductor crystal layer is not more than4.5×10K. Thereby, a composite substrate in which a semiconductor crystal layer isattached to a sintered base, and a composite base suitably used for that compositesubstrate are provided.

申请人：Yuki Seki,Issei Satoh,Koji Uematsu,Yoshiyuki Yamamoto

地址：Itami JP,Itami JP,Itami JP,Itami JP

国籍：JP,JP,JP,JP

代理机构：Drinker Biddle & Reath LLP

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