Substrate for epitaxial growth

专利名称：Substrate for epitaxial growth发明人：Shibata, Tomohiko,Sumiya, Shigeaki,Asai,

Keiichiro,Tanaka, Mitsuhiro 703 Arthills-Kirigaoka Minamikan

申请号：EP03257970.8申请日：20031217公开号：EP1431426B1公开日：20120201

摘要：A substrate for epitaxial growth allowing formation of an Al-containing group IIInitride film having high crystal quality is provided. A nitride film containing at least Al isformed on a 6H-SiC base by CVD at a temperature of at least 1100°C, for example. Thesubstrate for epitaxial growth allowing formation of an Al-containing group III nitride filmhaving high crystal quality is obtained by setting the dislocation density of the nitride filmto not more than 1 × 1011/cm2, the full width at half maximum of an X-ray rocking curvefor (002) plane to not more than 200 seconds and the full width at the half maximum ofthe X-ray rocking curve for (102) plane to not more than 1500 seconds.

申请人：NGK INSULATORS LTD

地址：JP

国籍：JP

代理机构：Paget, Hugh Charles Edward

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