SUD70N03-06P资料

SUD70N03-06P

New Product

Vishay Siliconix

N-Channel 30-V (D-S) 175_C MOSFET

PRODUCT SUMMARY

VDS (V)

30

FEATURES

ID (A)b

7070

rDS(on) (W)

0.006 @ VGS = 10 V0.009 @ VGS = 4.5 V

DTrenchFETr Power MOSFETDHigh CurrentD100% Rg Tested

APPLICATIONS

DDC/DC Converters

−Optimized For Low SideDSynchronous Rectifiers

D

TO-252

Drain Connected to Tab

G

D

S

G

Top View

Ordering Information: SUD70N03-06P

SN-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Drain-Source VoltageGate-Source VoltageContinuous Drain CurrentaPulsed Drain Current

Continuous Source Current (Diode Conduction)aAvalanche Current, single pulseAvalanche Energy, single pulseMaximum Power Dissipation

Operating Junction and Storage Temperature Range

L = 01 mHL = 0.1 mHTC = 25_CTA = 25_CTC = 25_CTC = 100_C

Symbol

VDSVGSIDIDMISIASEASPDTJ, Tstg

Limit

30\"207070b1002745101888.3a−55 to 175

Unit

V

A

mJW_C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-AmbientMaximum JunctiontoAmbientaMaximum Junction-to-Case

Notes

a.Surface Mounted on FR4 Board, t v 10 sec.b.Limited by package.Document Number: 72238S-40427—Rev. C, 15-Mar-04

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t v 10 secSteady State

Symbol

RthJARthJC

Typical

101.4

Maximum

18501.7

Unit

_C/W

1

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SUD70N03-06P

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Static

Drain-Source Breakdown VoltageGate Threshold VoltageGate-Body Leakage

Zero Gate Voltage Drain CurrentOn-State Drain CurrentbDrain-Source On-State ResistanceDrainSource OnState ResistancebForward TransconductancebV(BR)DSSVGS(th)IGSSIDSSID(on)rDS(on)gfs

VGS = 0 V, ID = 250 mAVDS = VGS, ID = 250 mAVDS = 0 V, VGS = \"20 VVDS = 30 V, VGS = 0 VVDS = 30 V, VGS = 0 V, TJ = 125_CVDS = 5 V, VGS = 10 VVGS = 10 V, ID = 20 AVGS = 10 V, ID = 20 A, TJ = 125_CVGS = 4.5 V, ID = 20 AVDS = 15 V, ID = 20 A200.007250

0.00460.0060.01050.009SW

301.0

3.0\"100150VnAmAA

SymbolTest ConditionMinTypaMaxUnit

Dynamica

Input CapacitanceOutput CapacitanceReverse Transfer CapacitanceTotal Gate ChargecGate-Source ChargecGate-Drain ChargecGate ResistanceTurn-On Delay TimecRise TimecTurn-Off Delay TimecFall TimecCissCossCrssQgQgsQgdRgtd(on)trtd(off)tf

VDD = 15 V, RL = 0.3 W

ID^ 50 A, VGEN = 10 V, Rg = 2.5 W

f = 1 MHz

0.9

VDS = 15 V, 15 V, VGS = 4.5 V, I 4.5 V, ID = 50 A 50 AVGS = 0 V, VDS = 25 V, f = 1 MHz

310056525521107.52.0121230103.420204515nsW

30nCpFp

Source-Drain Diode Ratings and Characteristic (TC = 25_C)

Pulsed CurrentDiode Forward VoltagebSource-Drain Reverse Recovery TimeISMVSDtrr

IF = 100 A, VGS = 0 VIF = 50 A, di/dt = 100 A/ms1.2351001.570AVnsNotes

a.Guaranteed by design, not subject to production testing.b.Pulse test; pulse width v300 ms, duty cycle v2%.c.Independent of operating temperature.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)Output Characteristics200VGS = 10 thru 6 V160ID− Drain Current (A)5 VID− Drain Current (A)80100Transfer Characteristics12060804 V40TC = 125_C2025_C−55_C0403 V00

2

4

6

8

10

VDS − Drain-to-Source Voltage (V)

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012345

VGS − Gate-to-Source Voltage (V)

Document Number: 72238S-40427—Rev. C, 15-Mar-04

2

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SUD70N03-06P

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Transconductance

120100

GFS − Transconductance (S)8060402000

10

20

30

40

50

125_CTC = −55_C25_CRDS(on) − On-Resistance (W)0.0120.015

Vishay Siliconix

On-Resistance vs. Drain Current

0.009

VGS = 4.5 V0.006

VGS = 10 V0.003

0.000

0

20

40

60

80

100

ID − Drain Current (A)

400035003000250020001500100050000

5

10

15

20

25

30

VDS − Drain-to-Source Voltage (V)CrssCossID − Drain Current (A)10

VDS = 15 VID = 50 ACapacitance

CissVGS− Gate-to-Source Voltage (V)Gate Charge8

C − Capacitance (pF)6

4

2

00

10

20

30

40

50

Qg − Total Gate Charge (nC)

2.0

On-Resistance vs. Junction Temperature

VGS = 10 VID = 20 AIS− Source Current (A)100

Source-Drain Diode Forward Voltage

rDS(on) − On-Resiistance(Normalized)1.5

TJ = 150_C10

1.0

TJ = 25_C0.5

0.0−50

−250255075100125150175

10

0.3

0.6

0.9

1.2

1.5

VSD − Source-to-Drain Voltage (V)

TJ − Junction Temperature (_C)

Document Number: 72238S-40427—Rev. C, 15-Mar-04

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3

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SUD70N03-06P

Vishay Siliconix

THERMAL RATINGS

Maximum Avalanche Drain Current vs.

Ambient Temperature

3025

100ID− Drain Current (A)201510500255075100125150175TA − Ambient Temperature (_C)ID− Drain Current (A)New Product

1000Limitedby rDS(on)Safe Operating Area

10, 100 ms101 ms10 ms100 ms1 s10 sTA = 25_CSingle Pulse100 sdc10.10.010.1110100VDS − Drain-to-Source Voltage (V)Normalized Thermal Transient Impedance, Junction-to-Ambient21Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.50.20.10.10.020.05Single Pulse0.0110−410−310−210−11101001000Square Wave Pulse Duration (sec)Normalized Thermal Transient Impedance, Junction-to-Case2Normalized Effective TransientThermal Impedance1Duty Cycle = 0.50.20.10.10.020.05Single Pulse0.0110−410−310−210−1

Square Wave Pulse Duration (sec)

110100

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4

Document Number: 72238S-40427—Rev. C, 15-Mar-04