专利名称：InP based VCSEL with zinc-doped tunnel-junction and diffusion blocking layer
发明人：Bour, David,Lin, Chaokun,Tan, Michael,Perez,
Bill
申请号：EP06008810.1申请日：20031023公开号：EP1679774A3公开日：20060726
专利附图：
摘要：The invention relates to a VCSEL comprising a bottom mirror (12); an activeregion comprising a quantum well layer (15); a first layer of a p-type semiconductor (64);
a barrier layer (63); a first tunnel junction layer (52); a second tunnel junction layer (51);and a top mirror (14). All of the first layer, the barrier layer, and the first and secondtunnel junction layers comprise a material of a InP family of materials. The first andsecond tunnel junction layers are adjacent to one another and form a tunnel junction (17),wherein the tunnel junction and the active region lie between the top and bottommirrors. Due to the high doping level of the first and second tunnel junction layers (52,51)it is possible to reduce their thickness and to reduce absorption losses in the tunneljunction (17).
申请人：Agilent Technologies, Inc.
地址：395 Page Mill Road Palo Alto, CA 94306 US
国籍：US
代理机构：Liesegang, Eva
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