SI6435ADQ资料

Si6435ADQNew ProductVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT󰀀SUMMARYVDS (V)–30rDS(on) (W)0.030 @ VGS = –10 V0.055 @ VGS = –4.5 VID (A)\"5.5\"4.1S*TSSOP-8DSSG1234Top ViewDP-Channel MOSFETD8DSSDG*Source Pins 2, 3, 6 and 7 must be tied common.Si6435ADQ765ABSOLUTE󰀀MAXIMUM󰀀RATINGS󰀀(TA=󰀀25_C󰀀UNLESS󰀀OTHERWISE󰀀NOTED)ParameterDrain-Source VoltageGate-Source VoltageContinuous Drain Current (TJ = 150_C)aPulsed Drain Current (10 ms Pulse Width)Continuous Source Current (Diode Conduction)aMaximum Power DissipationaOperating Junction and Storage Temperature RangeTA = 25_CTA = 70_CTA = 25_CTA = 70_CSymbolVDSVGSIDIDMISPDTJ, Tstg10 secs–30\"20\"5.5\"4.5\"30–1.351.51.0Steady StateUnitV\"4.7\"3.7A–0.951.050.67–55 to 150W_CTHERMAL󰀀RESISTANCE󰀀RATINGSParameterMaximum Junction-to-AmbientMaximumJunction-to-AmbientaMaximum Junction-to-FootNotesa.Surface Mounted on 1” x 1” FR4 Board.Document Number: 71104S-99421—Rev. A, 29-Nov-99www.vishay.com S FaxBack 408-970-5600 t v 10 secSteady StateSteady StateSymbolRthJARthJFTypical6510043Maximum8312052Unit_C/W2-1元器件交易网www.cecb2b.com

Si6435ADQVishay SiliconixNew ProductSPECIFICATIONS󰀀(TJ=󰀀25_C󰀀UNLESS󰀀OTHERWISE󰀀NOTED)ParameterStatic Gate Threshold VoltageGate-Body LeakageZero Gate Voltage Drain CurrentOn-State Drain CurrentaVGS(th)IGSSIDSSVDS = VGS, ID = –250 mAVDS = 0 V, VGS = \"20 VVDS = –24 V, VGS = 0 VVDS = –24 V, VGS = 0 V, TJ = 70_CVDS –5 V, VGS = –10 VVDS –5 V, VGS = –4.5 VVGS = –10 V, ID = –5.5 AVGS = –4.5 V, ID = –4.1 AVDS = –15 V, ID = –5.5 AIS = –1.3 A, VGS = 0 V–30–70.0240.04212–0.8–1.10.0300.055WSV–1.0\"100–1–10VnAmASymbolTest ConditionMinTypMaxUnitID(on)ADrainSourceOnStateResistanceaDrain-Source On-State ResistanceForward TransconductanceaDiode Forward VoltagearDS(on)DS()gfsVSDDynamicbTotal Gate ChargeGate-Source ChargeGate-Drain ChargeTurn-On Delay TimeRise TimeTurn-Off Delay TimeFall TimeSource-Drain Reverse Recovery TimeQgQgsQgdtd(on)trtd(off)tftrrIF = –1.3 A, di/dt = 100 A/msVDD = –15 V, R15V,RL = 15 15WID^ –1 A, V1AVGEN = –10 V, R10VRG = 6 6WVDS = –15 V, 15V VGS = –5 V, I5VID = –5.5 A55A155.75.012104217402020602580ns20nCCNotesa.Pulse test; pulse width v300 ms, duty cycle v2%.b.Guaranteed by design, not subject to production testing.TYPICAL󰀀CHARACTERISTICS󰀀(25_C󰀀UNLESS󰀀NOTED)Output Characteristics30VGS = 10 thru 5 V24ID– Drain Current (A)ID– Drain Current (A)2430Transfer Characteristics184 V181212TC = 125_C25_C0–55_C34562 V00246810VDS – Drain-to-Source Voltage (V)3 V6012VGS – Gate-to-Source Voltage (V)Document Number: 71104S-99421—Rev. A, 29-Nov-99www.vishay.com S FaxBack 408-970-56002-2元器件交易网www.cecb2b.com

Si6435ADQNew ProductTYPICAL󰀀CHARACTERISTICS󰀀(25_C󰀀UNLESS󰀀NOTED)On-Resistance vs. Drain Current0.15rDS(on)– On-Resistance (W)2500CissVishay SiliconixCapacitance0.09C – Capacitance (pF)VGS = 10 V0.12200015000.06VGS = 4.5 V0.031000Coss500Crss0061218243000612182430ID – Drain Current (A)VDS – Drain-to-Source Voltage (V)Gate Charge10VGS– Gate-to-Source Voltage (V)VDS = 15 VID = 5.5 A81.6On-Resistance vs. Junction TemperatureVGS = 10 VID = 5.5 A1.46rDS(on)– On-Resistance (W)(Normalized)121824301.241.020.8006Qg – Total Gate Charge (nC)0.6–50–250255075100125150TJ – Junction Temperature (_C)Source-Drain Diode Forward Voltage300.20On-Resistance vs. Gate-to-Source VoltagerDS(on)– On-Resistance (W)TJ = 150_CIS– Source Current (A)100.15ID = 5.5 A0.10TJ = 25_C0.05100.20.40.60.81.01.2VSD – Source-to-Drain Voltage (V)00246810VGS – Gate-to-Source Voltage (V)Document Number: 71104S-99421—Rev. A, 29-Nov-99www.vishay.com S FaxBack 408-970-56002-3