Memory device and method for writing data in memor

专利名称：Memory device and method for writing data

in memory cell with boosted bitline voltage

发明人：In-young Chung申请号：US10824784申请日：20040415

公开号：US20050105344A1公开日：20050519

专利附图：

摘要：Provided are a method of writing data into a memory cell with a boosted writevoltage and a memory device that performs the method. The method involves (a)transmitting data input in response to a write command to a bitline; (b) writing the input

data on the bitline into a memory cell capacitor via a memory cell transistor; (c)generating a write boosting signal in response to the write command and a bitlineprecharge signal; (d) boosting a voltage of a capacitor connected between the writeboosting signal and the bitline in response to the write boosting signal; (e) boosting avoltage of the bitline to a predetermined level; and (f) rewriting the input data into thememory cell capacitor with the boosted voltage of the bitline.

申请人：In-young Chung

地址：Suwon-si KR

国籍：KR

更多信息请下载全文后查看