Method of making a semiconductor device

专利名称：Method of making a semiconductor device发明人：Koichi Maari申请号：US08/327718申请日：19941024公开号：US05510283A公开日：19960423

摘要：A semiconductor device includes a semiconductor substrate, element isolationfilms, channel stop diffusion layers, and elements formed on the semiconductorsubstrate in spaced-apart relation from each other by means of the element isolationfilms. The element has a floating gate. The element isolation film has such a filmthickness of < t > that the conducting type of a portion of the semiconductor substrateunder the element isolation film, which is disposed at a position where a control gate isformed on the upper surface of the element isolation film by way of the floating gate, isnot inverted, and that the conducting type of a portion of the semiconductor substrateunder the element isolation film, which is disposed at a position where the control gate isdirectly formed on the upper surface of the element isolation film, is inverted. With thisarrangement, the elements are separated from each other by each element isolation filmhaving a thinner thickness of < t > .

申请人：SONY CORPORATION

代理机构：Hill, Steadman & Simpson

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