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Manufacturing method of semiconductor acceleration

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专利名称:Manufacturing method of semiconductor

acceleration sensor

发明人:Shinogi, Masataka,Saitoh, Yutaka,Kato, Kenji申请号:EP97302661.0申请日:19970418公开号:EP0802416A3公开日:19990127

专利附图:

摘要:A process for manufacturing a semiconductor acceleration sensor 12 from asemiconductor wafer 1 is disclosed, wherein a piezoresistor 21 is formed on thesemiconductor wafer 1 and the wafer 1 is fixed for dicing with a blade 3 using a freezing

chuck 6.

申请人:Seiko Instruments R&D Center Inc.

地址:8, Nakase 1-chome, Mihama-ku Chiba-shi, Chiba JP

国籍:JP

代理机构:Sturt, Clifford Mark

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