专利名称:Manufacturing method of semiconductor
acceleration sensor
发明人:Shinogi, Masataka,Saitoh, Yutaka,Kato, Kenji申请号:EP97302661.0申请日:19970418公开号:EP0802416A3公开日:19990127
专利附图:
摘要:A process for manufacturing a semiconductor acceleration sensor 12 from asemiconductor wafer 1 is disclosed, wherein a piezoresistor 21 is formed on thesemiconductor wafer 1 and the wafer 1 is fixed for dicing with a blade 3 using a freezing
chuck 6.
申请人:Seiko Instruments R&D Center Inc.
地址:8, Nakase 1-chome, Mihama-ku Chiba-shi, Chiba JP
国籍:JP
代理机构:Sturt, Clifford Mark
更多信息请下载全文后查看
因篇幅问题不能全部显示,请点此查看更多更全内容
Copyright © 2019- yrrf.cn 版权所有 赣ICP备2024042794号-2
违法及侵权请联系:TEL:199 1889 7713 E-MAIL:2724546146@qq.com
本站由北京市万商天勤律师事务所王兴未律师提供法律服务