Apparatus for controlling flow rate of gases used

专利名称：Apparatus for controlling flow rate of gases

used in semiconductor device by differentialpressure

发明人：Kang-Ho Ahn申请号：US10562158申请日：20040624公开号：US07334602B2公开日：20080226

专利附图：

摘要：Provided is apparatus for controlling flow rate of gases used in semiconductordevice by differential pressure by generating differential pressure in a fluid path. A

differential pressure generation element generates pressure difference in the fluid pathof gases used in semiconductor device fabrication, a pressure, sensor which is installed ata bypass of the fluid path detects the pressure difference, and a central processing unit(CPU) measures and controls a flow rate of the gases, thereby the present invention iscapable of controlling the flow rate precisely and rapidly, and enhancing the degree ofpurity of the gases by the filtering function of the differential pressure generationelement itself.

申请人：Kang-Ho Ahn

地址：102-1504, Ichon Apt., Ichon-Dong, Yongsan-Gu Seoul KR

国籍：KR

代理机构：Lowe Hauptman Ham & Berner

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