Input-output circuit and current control circuit o

专利名称：Input-output circuit and current control

circuit of semiconductor memory device

发明人：Ki-Hwan Song,Dae-Woon Kang申请号：US09950962申请日：20010912

公开号：US20020110034A1公开日：20020815

专利附图：

摘要：An input-output circuit and a current control circuit of a semiconductor memorydevice which is insensitive to variations in manufacturing process, in voltage levels ofinput-output pins, and in temperature, and can prevent undesired effects such as an

excess of leakage current during operation in a test mode such as a burn-in test. Thecurrent control circuit includes first and second transmitters having CMOS transmissiongates, a voltage divider, a comparator, a current control counter, a first resistor

connected between a bulk of a PMOS transistor of the first CMOS transmission gate anda DC voltage, and a second resistor connected between a bulk of a PMOS transistor ofthe second CMOS transmission gate and a DC voltage. The first and second resistorsprevent current greater than a predetermined level from leaking even though PN diodesformed in the PMOS transistors of the first and second transmitters are forward biased.As a result, undesired effects such as an excess of leakage current are prevented in thetest mode such as the burn-in test. Also, since the first and second transmitters includeCMOS transmission gates, an NMOS transistor and a PMOS transistor of the CMOStransmission gate complement each other. Thus, the current control circuit is insensitiveto variations in manufacturing process, in voltage levels of input-output pins, and intemperature.

申请人：SAMSUNG ELECTRONICS CO., LTD.

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