专利名称:Integrated logic circuit
发明人:Artashes R. Nazarian,Vyacheslav Y.
Kremlev,Vilyam N. Kokin,Nikolai M. Manzha
申请号:US05/865362申请日:19771229公开号:US04160918A公开日:19790710
摘要:An integrated injection logic circuit comprises a switching element using aunipolar FET whose gates are connected to the collectors of a load transistor. Theemitter of the load transistor is connected to a power supply and the base area iscombined with the source of the unipolar FET and grounded. Connected to the gates ofthe unipolar FET and to the base area of the load transistor are double-pole gatingelements. The number of such elements is equal to the number of gates of the unipolarFET. The conduction voltage of the gating elements is lower than that across the p-njunctions of the respective gates of the unipolar FET.
申请人:NAZARIAN; ARTASHES R.,KREMLEV; VYACHESLAV Y.,KOKIN; VILYAMN.,MANZHA; NIKOLAI M.
代理机构:Lackenbach, Lilling & Siegel
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