专利名称：FINFET SEMICONDUCTOR DEVICES WITH
STRESSED CHANNEL REGIONS
发明人：Xiuyu Cai,Ruilong Xie,Kangguo Cheng,Ali
Khakifirooz,Ajey P. Jacob,Witold P. Maszara
申请号：US15186632申请日：20160620
公开号：US20160293706A1公开日：20161006
专利附图：
摘要：A FinFET device includes a substrate, a gate structure positioned above thesubstrate, and sidewall spacers positioned adjacent to the gate structure. An epi
semiconductor material is positioned in source and drain regions of the FinFET device andlaterally outside of the sidewall spacers. A fin extends laterally under the gate structureand the sidewall spacers in a gate length direction of the FinFET device, wherein the endsurfaces of the fin abut and engage the epi semiconductor material. A stressed materialis positioned in a channel cavity located below the fin, above the substrate, and laterallybetween the epi semiconductor material, the stressed material having a top surface thatabuts and engages a bottom surface of the fin, a bottom surface that abuts and engagesthe substrate, and end surfaces that abut and engage the epi semiconductor material.
申请人：GLOBALFOUNDRIES Inc.,International Business Machines Corporation
地址：Grand Cayman KY,Armonk NY US
国籍：KY,US
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