Application-specific SRAM memory cell for low volt

专利名称：Application-specific SRAM memory cell for

low voltage, high speed operation

发明人：Yi-Ren Warry Hwang,Luigi DiGregorio申请号：US08/939016申请日：19970926公开号：US05870331A公开日：19990209

摘要：An application-specific SRAM memory cell includes first and second cross-coupled inverters coupled at first and second nodes for storing a bit of information atthe first node and a complement of the bit at the second node, first and second series-connected transistors for coupling a write data signal to the first node in response to awrite address signal and a clock having high logical values, third, fourth and fifth series-connected transistors for coupling the second node to ground in response to the writedata signal, the write address signal and the clock having high logical values, a sixthtransistor for coupling the bit to a read data line in response to a read address signalhaving a high logical value, a seventh transistor for coupling the complement of the bit toa third node in response to the read address signal having a high logical value, an eighthtransistor for coupling the read data line to a power supply terminal in response to thethird node having a low logical value, and a ninth transistor for coupling the third node tothe power supply terminal in response to the read data line having a low logical value. Inmemory structures such as register files or arrays, the eighth and ninth transistorsprovide an output stage that can be shared by each memory cell coupled to the readdata line.

申请人：ADVANCED MICRO DEVICES, INC.

代理机构：Skjerven, Morrill, MacPherson, Franklin & Friel LLP

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