TLP521

TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4TLP521XGB, TLP521-2XGB, TLP521-4XGBTLP521X, TLP521-2X, TLP521-4X HIGH DENSITY MOUNTING PHOTOTRANSISTOROPTICALLY COUPLED ISOLATORSAPPROVALSlUL recognised, File No. E91231'X' SPECIFICATION APPROVALSlVDE 0884 in 3 available lead form : -- STD- G form- SMD approved to CECC 00802lTLP5212.7.06.01.25.084.0812Dimensions in mm43BSI approved - Certificate No. 80014.03.00.57.6213°Max0.26DESCRIPTIONThe TLP521, TLP521-2, TLP521-4 series ofoptically coupled isolators consist of infraredlight emitting diodes and NPN silicon phototransistors in space efficient dual in line plasticpackages.FEATURESlOptions :-10mm lead spread - add G after part no.Surface mount - add SM after part no.Tape&reel - add SMT&R after part no.lHigh Current Transfer Ratio ( 50% min)lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )lHigh BVCEO ( 55Vmin )lAll electrical parameters 100% testedlCustom electrical selections availableAPPLICATIONSlComputer terminalslIndustrial systems controllerslMeasuring instrumentslSignal transmission between systems ofdifferent potentials and impedancesOPTION SMSURFACE MOUNTOPTION G 7.623.0TLP521-20.52.3.3517.06.087657.622341.210.169.1.03.00.53.00.53.350.26123457.06.01.220.3219.324.03.00.50.53.350.266787.6213°Max16151413121110913°MaxTLP521-42.0.60.110.46 9.86 0.75 1.250.2610.16ISOCOM COMPONENTS LTDUnit 25B, Park View Road West,Park View Industrial Estate, Brenda RoadHartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/4/03DB926m-AAS/A3ABSOLUTE MAXIMUM RATINGS(25°C unless otherwise specified)

Storage Temperature-55°C to + 125°COperating Temperature-30°C to + 100°CLead Soldering Temperature(1/16 inch (1.6mm) from case for 10 secs) 260°CINPUT DIODEForward CurrentReverse VoltagePower Dissipation50mA6V70mWOUTPUT TRANSISTORCollector-emitter Voltage BVCEOEmitter-collector Voltage BVECOPower DissipationPOWER DISSIPATIONTotal Power Dissipation(derate linearly 2.67mW/°C above 25°C)55V 6V150mW200mWELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )PARAMETERInputForward Voltage (VF)Reverse Current (IR)OutputCollector-emitter Breakdown (BVCEO)55 ( Note 2 )Emitter-collector Breakdown (BVECO) 6Collector-emitter Dark Current (ICEO)Current Transfer Ratio (CTR) (Note 2)TLP521, TLP521-2, TLP521-4CTR selection availableBLGBGBCollector-emitter Saturation VoltageVCE (SAT)-GB53007500Input-output Isolation Resistance RISO 5x1010Response Time (Rise), trResponse Time (Fall), tfInput to Output Isolation Voltage VISO5020010030MINTYPMAXUNITS TEST CONDITION1.01.151.310VµAIF = 10mAVR = 4VIC = 0.5mAIE = 100µAVCE = 20V5mA IF , 5V VCE1mA IF , 0.4V VCE8mA IF , 2.4mA IC1mA IF , 0.2mA ICSee note 1See note 1VIO = 500V (note 1)VCE = 2V ,IC = 2mA, RL = 100ΩVVnA100Coupled600600600%%%%VVVRMSVPKΩµsµs0.40.443Note 1Note 2Measured with input leads shorted together and output leads shorted together.Special Selections are available on request. Please consult the factory.

7/4/03

DB926m-AAS/A3

Collector Power Dissipation vs. Ambient TemperatureCollector Current vs. Low200)Wm( CP 150

noitapissid100

rewop rot50

celloC0

-30 0 25 50 75 100 125

Ambient temperature TA ( °C )Forward Current vs. Ambient Temperature60

50)Am( F40I tnerru30c draw20roF100

-30 0 25 50 75 100 125

Ambient temperature TA ( °C )Collector-emitter Saturation)V(Voltage vs. Ambient Temperature

)AT0.28

S(ECV0.24 eIF = 5mAgatl0.20IC = 1mAov noi0.16taruta0.12s retti0.08me-ro0.04tcello 0

C-30 0 25 50 75 100

Ambient temperature TA ( °C )

7/4/03

Collector-emitter Voltage

25TA = 25°C)Am(2050 C40I tn30er1520ruc ro10tc10e5lloC 5 IF = 2mA 0

0 0.2 0.4 0.6 0.8 1.0

Collector-emitter voltage VCE ( V )

Collector Current vs. Collector-emitter Voltage

50

50TA = 25°C304020C1530102010 IF = 5mA0

0 2 4 6 8 10Collector-emitter voltage VCE ( V )Current Transfer Ratio vs. Forward Current32028024020016012080V40TCE = 5VA = 25°C 0

1 2 5 10 20 50

Forward current IF (mA)

DB926m-AAS/A3

Collector current I (mA)Current transfer ratio CTR (%)