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PD - 93999

IRF5852

HEXFET® Power MOSFET

lllllUltra Low On-ResistanceDual N-Channel MOSFETSurface Mount

Available in Tape & ReelLow Gate ChargeVDSS

20V

RDS(on) max (Ω)

0.090@VGS = 4.5V0.120@VGS = 2.5V

2.7A2.2A

DescriptionThese N-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. Thisbenefit provides the designer with an extremely efficientdevice for use in battery and load managementapplications.This Dual TSOP-6 package is ideal for applicationswhere printed circuit board space is at a premium andwhere maximum functionality is required. With twodie per package, the IRF5852 can provide thefunctionality of two SOT-23 packages in a smallerfootprint. Its unique thermal design and RDS(on)reduction enables an increase in current-handlingcapability.TSOP-6G116D1S225S1G234D2Top ViewAbsolute Maximum RatingsParameterVDSID @ TA = 25°CID @ TA= 70°CIDMPD @TA = 25°CPD @TA = 70°CVGSTJ, TSTGDrain- Source VoltageContinuous Drain Current, VGS @ 4.5VContinuous Drain Current, VGS @ 4.5VPulsed Drain Current 󰂁Power Dissipation 󰂃Power Dissipation󰂃Linear Derating FactorGate-to-Source VoltageJunction and Storage Temperature RangeMax.202.72.2110.960.627.7 ± 12-55 to + 150UnitsVAWmW/°CV°CThermal Resistance

Parameter

RθJA

Maximum Junction-to-Ambient󰂃Max.

130

Units

°C/W

www.irf.com1

3/1/01

IRF5852

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