专利名称：Hydrogen-absorbing alloy for negative
electrode
发明人：Kimoto, Mamoru, c/o Sanyo Electric Co.
Ltd.,Tikano, Yoshito, c/o Sanyo Electric Co.Ltd.,Mizitaki, Husago, c/o Sanyo Electric Co.Ltd.,Mastuura, Yoshinori, c/o Sanyo ElectricCo. Ltd.,Nishio, Koji, c/o Sanyo Electric Co.Ltd.,Furukawa, Nobohiro, c/o Sanyo ElectricCo. Ltd.
申请号：EP93301638.8申请日：19930304公开号：EP0560535A1公开日：19930915
摘要：A hydrogen-absorbing alloy electrode having a hydrogen-absorbing alloy in asingle crystal system and composed of at least three elements which are coated on aconductive substrate. One of the at least three elements has a density distribution profilewith at least two adjacent high density peaks and a lowest density point between the atleast two adjacent high density peaks. A density difference between one of the at leasttwo adjacent high density peaks and the lowest density point is not less than about 3.0wt% and a distance between the two adjacent high density peaks is not less than about20 µm. The hydrogen-absorbing alloy has a volume of 2µm³ and may include an additiveselected from a group consisting of Manganese (Mn), Boron (B), Tungsten (W) and Cobalt(Co).
申请人：SANYO ELECTRIC CO., LIMITED.
地址：18 Keihan-Hondori 2-chome Moriguchi City, Osaka JP
国籍：JP
代理机构：Allman, Peter John
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