Transistor2SD637Silicon NPN epitaxial planer typeFor low-power general amplification6.9±0.11.52.5±0.11.01.02.4±0.22.0±0.23.5±0.1Unit: mmsFeaturesqqq1.5 R0.9R0.90.850.55±0.11.25±0.050.45±0.05sAbsolute Maximum Ratings (Ta=25˚C)ParameterCollector to base voltageCollector to emitter voltageEmitter to base voltagePeak collector currentCollector currentCollector power dissipationJunction temperatureStorage temperatureSymbolVCBOVCEOVEBOICPICPCTjTstgRatings60507200100400150–55 ~ +150UnitVVVmAmAmW˚C˚C1:Base2:Collector3:Emitter2.52.5321EIAJ:SC–71M Type Mold PackagesElectrical Characteristics (Ta=25˚C)ParameterCollector cutoff currentCollector to base voltageCollector to emitter voltageEmitter to base voltageForward current transfer ratioCollector to emitter saturation voltageTransition frequencyCollector output capacitanceSymbolICBOICEOVCBOVCEOVEBOhFE*VCE(sat)fTCobConditionsVCB = 20V, IE = 0VCE = 20V, IB = 0IC = 10µA, IE = 0IC = 2mA, IB = 0IE = 10µA, IC = 0VCE = 10V, IC = 2mAIC = 100mA, IB = 10mAVCB = 10V, IE = –2mA, f = 200MHzVCB = 10V, IE = 0, f = 1MHz605071600.31503.54600.5VMHzpFmintypmax11UnitµAµAVVV*hFE Rank classificationRankhFEQ160 ~ 260R210 ~ 340S290 ~ 4604.1±0.2High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.41.0±0.1R0.4.5±0.171
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TransistorPC — Ta500602SD637IC — VCETa=25˚CIB=160µA1200VCE=10VTa=25˚C1000IB — VBECollector power dissipation PC (mW)Collector current IC (mA)40050140µA40120µA100µA3080µA2060µA40µA1020µABase current IB (µA)800300600200400100200002040608010012014016000246810000.20.40.60.81.0Ambient temperature Ta (˚C)Collector to emitter voltage VCE (V)Base to emitter voltage VBE (V)IC — VBE200VCE=10V160200240VCE=10VTa=25˚CIC — IBCollector to emitter saturation voltage VCE(sat) (V)1003010310.30.10.030.010.1VCE(sat) — ICIC/IB=10Collector current IC (mA)Collector current IC (mA)16012025˚CTa=75˚C80–25˚C1208025˚CTa=75˚C–25˚C4040000.40.81.21.62.00020040060080010000.3131030100Base to emitter voltage VBE (V)Base current IB (µA)Collector current IC (mA)hFE — IC600VCE=10V300fT — IECollector output capacitance Cob (pF)VCB=10VTa=25˚C12Cob — VCBIE=0f=1MHzTa=25˚CForward current transfer ratio hFE500Transition frequency fT (MHz)24010400Ta=75˚C25˚C8180300–25˚C6120200410060200.10.31310301000– 0.1– 0.3–1–3–10–30–1000131030100Collector current IC (mA)Emitter current IE (mA)Collector to base voltage VCB (V)2
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TransistorNV — IC240VCE=10VTa=25˚CFunction=FLAT1002SD637h Parameter — ICVCE=5Vf=270Hz20030Noise voltage NV (mV)120Rg=100kΩh Parameter16010hfe (!100)38022kΩ404.7kΩ1hoe (10–1µS)hre (!10–4)0.3hie (!10kΩ)0103010030010000.10.10.31310Collector current IC (µA)Collector current IC (mA)3
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