Methods for forming package-on-package structures

专利名称：Methods for forming package-on-package

structures having buffer dams

发明人：Shou-Cheng Hu,Ching-Wen Hsiao,Chen-Shien

Chen

申请号：US15099236申请日：20160414公开号：US09837289B2公开日：20171205

专利附图：

摘要：Package-on-Package (PoP) structures and methods of forming the same aredisclosed. In some embodiments, a method of forming a PoP structure may include:

plating at least one through-assembly via (TAV) over a peripheral region of a conductiveseed layer; forming a dam member over a central region of the conductive seed layer;and placing a die over the central region of the conductive seed layer. The dam membermay be laterally separated from the die and disposed between the die and the at leastone TAV. The method may further include encapsulating the die, the dam member, andthe at least one TAV in a polymer material.

申请人：Taiwan Semiconductor Manufacturing Company, Ltd.

地址：Hsin-Chu TW

国籍：TW

代理机构：Slater Matsil, LLP

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