High-frequency introducing means, plasma treatment

专利名称：High-frequency introducing means, plasma

treatment apparatus, and plasma treatmentmethod

发明人：Kazuyoshi Akiyama,Atsushi

Yamagami,Satoshi Takaki,Koji Teranishi

申请号：US08/988137申请日：19971210公开号：US06152071A公开日：20001128

摘要：A high frequency introducing means is provided which comprises a highfrequency electrode having a shape of a bar or plate for generating plasma by highfrequency power, and an adjustment mechanism for adjusting an absolute value ofreactance between an end of the electrode opposite to a high frequency powerintroducing point of the electrode and a grounded portion. A plasma treatmentapparatus and a plasma treatment method are also provided employing the above highfrequency introducing means. A deposition film of high quality is formed stably andefficiently in an extremely uniform thickness and an extremely uniform quality at a highspeed on a base member of a large area by adjusting the absolute value of the reactance.

申请人：CANON KABUSHIKI KAISHA

代理机构：Fitzpatrick, Cella, Harper & Scinto

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