20NAB06资料

SKiiP 22 NAB 12 - SKiiP 22 NAB 12 IAbsolute Maximum RatingsSymbol

Conditions 1)

Values1200± 2023 / 16 / 3024 / 1748 / 341500257002400

– 40 . . . + 150– 40 . . . + 125

2500

UnitsVVAAAAVAAA2s°C°CV

Inverter & ChopperVCESVGESICTheatsink = 25 / 80 °C

tp < 1 ms; Theatsink = 25 / 80 °CICM

Theatsink = 25 / 80 °CIF = –IC

IFM = –ICMtp < 1 ms; Theatsink = 25 / 80 °CBridge RectifierVRRM

Theatsink = 80 °CID

IFSMtp = 10 ms; sin. 180 °, Tj = 25 °C2tp = 10 ms; sin. 180 °, Tj = 25 °CItTjTstgVisolAC, 1 min.

MiniSKiiP 2

SEMIKRON integrated intelligent Power SKiiP 22 NAB 12SKiiP 22 NAB 12 I 3)

3-phase bridge rectifier + braking chopper +

3-phase bridge inverter

Case M2

CharacteristicsSymbolConditions 1)IGBT - Inverter & ChopperIC = 15 ATj = 25 (125) °CVCEsatVCC = 600 V; VGE = ± 15 Vtd(on)trIC = 15 A; Tj = 125 °Ctd(off)Rgon = Rgoff = 82 Ωtfinductive loadEon + EoffCiesVCE = 25 V; VGE = 0 V, 1 MHzRthjhper IGBTDiode 2) - Inverter & ChopperVF = VECIF = 15 ATj = 25 (125) °CVTOTj = 125 °CrTTj = 125 °CIF = 15 A, VR = – 600 VIRRMdiF/dt = – 400 A/µsQrrEoffVGE = 0 V, Tj = 125 °Cper diodeRthjhDiode - RectifierVFIF = 35 A, Tj = 25 °CRthjhper diodeTemperature SensorT = 25 / 100 °CRTSShunts (SKiiP 22 NAB 12 I)Rcs(dc)5 % 4)Rcs(ac)1 %Mechanical Datacase to heatsink, SI UnitsM1mechanical outline see page CaseB 16 – 82min.–––––––––––––––––typ.max.Units2,5(3,1)3,0(3,7)V55110ns4590ns400600ns70100ns4,0–mJ1,0–nF–1,4K/WV2,0(1,8)2,5(2,3)V1,21,0mΩ7353–A16–µC2,7–mJ0,61,7K/W–1,2–1000 / 167016,510–M22,5–1,6VK/WΩmΩmΩNmUL recognized file no. E63532

••

1)2)

specification of shunts and temperature sensor see part Acommon characteristics see page B 16 – 4

Theatsink = 25 °C, unlessotherwise specified

CAL = Controlled Axial Lifetime Technology (soft and fast recovery)

With integrated DC and/or AC shunts

accuracy of pure shunt, please note that for DC shunt no separate sensing contact is used.

3)4)

© by SEMIKRON000131B 16 – 53

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Fig. 1Typ. output characteristic, tp = 80 µs; 25 °CFig. 2Typ. output characteristic, tp = 80 µs; 125 °C

5mWs422NA1203.xls22NA1204.xlsEonTj = 125 °CVCE = 600 VVGE = ± 15 VRG = 52 Ω

5mWs4Tj = 125 °CVCE = 600 VVGE = ± 15 VIC = 15 AEon3Eoff322Eoff1E00IC1020A301E00RG50100Ω150Fig. 3Turn-on /-off energy = f (IC)ICpuls = 15 A

Fig. 4Turn-on /-off energy = f (RG)VGE = 0 Vf = 1 MHz

Fig. 5Typ. gate charge characteristicB 16 –

Fig. 6Typ. capacitances vs. VCE

000131

© by SEMIKRON

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MiniSKiiP 1200 V

ICop/IC1.2Mini1207Tj = 150 °CVGE = ≥ 15 V

1.00.80.60.40.200255075100125150Th[°C]Fig. 7Rated current of the IGBT ICop / IC = f (Th)

ICpuls/IC2,5Mini1209Tj = ≤ 150 °CVGE = ± 15 V

ICsc/ICN12Mini1210210Tj = ≤ 150 °CVGE = ± 15 Vtsc = ≤ 10 µsLext < 25 nH

81,5614Note:*Allowed numbersofshort circuit:<1000*Timebetweenshortcircuit:>1s0,520050010001500VCE[V]005001000VCE[V]1500Fig. 9Turn-off safe operating area (RBSOA) of the IGBTFig. 10Safe operating area at short circuit of the IGBT

Fig. 11Typ. freewheeling diode forward characteristicB 16 – 4

Fig. 12Forward characteristic of the input bridge diode0698

© by SEMIKRON

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MiniSKiiP 2

+rect+B+DCI+SKiiP 20 NAB 06 ...SKiiP 21 NAB 06 ...SKiiP 20 NAB 12 ...SKiiP 22 NAB 12 ...CircuitCase M2

Layout and connections for the customer’s printed circuit boardNote:The shunts are available

only by option I

g1L1L2L3BgB+T-Tg2g3g5UVWg4Isu0ug6Isv0vIsw0wHauptanschlußpower connectorcontrol pinSteueranschluß-rect-B-DC-DC/A