专利名称：Semiconductor constructions发明人：Ulrich C. Boettiger,Scott L. Light申请号：US11115853申请日：20050425
公开号：US20050233588A1公开日：20051020
专利附图：
摘要：The invention includes methods by which the size and shape of photoresist-containing masking compositions can be selectively controlled after development of thephotoresist. For instance, photoresist features can be formed over a substrate utilizing aphotolithographic process. Subsequently, at least some of the photoresist features can
be exposed to actinic radiation to cause release of a substance from the photoresist. Alayer of material is formed over the photoresist features and over gaps between thefeatures. The material has a solubility in a solvent which is reduced when the materialinteracts with the substance released from the photoresist. The solvent is utilized toremove portions of the material which are not sufficiently proximate to the photoresistto receive the substance, selectively relative to portions which are sufficiently proximateto the photoresist. The photoresist features can be exposed to the actinic radiationeither before or after forming the layer of material.
申请人：Ulrich C. Boettiger,Scott L. Light
地址：Boise ID US,Boise ID US
国籍：US,US
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