专利名称：Nanosheet transistors on bulk material发明人：Kangguo Cheng,Ruilong Xie,Tenko
Yamashita,Chun-Chen Yeh
申请号：US15701894申请日：20170912公开号：US09917152B1公开日：20180313
专利附图：
摘要：A method of forming a semiconductor device and resulting device. The methodmay form a first gate on a gate region of a starting substrate. The starting substrateincludes alternating sacrificial layers and semiconductor layers above a buffer sacrificial
layer located on a bulk substrate. The method may remove the starting substratelocated between the gates. Etching the starting substrate creates a trench into the bulksubstrate. The method may form an insulating layer on the inside of the trench. Themethod may form a masking layer over in the trench in the starting substrate covering aportion of the insulating layer, but below a top surface of the buffer layer. The methodmay remove the unmasked portion of the insulating layer. The method may form asource/drain in the trench. The method may remove the buffer sacrificial layer, and thesacrificial layers in the layered nanosheet.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
地址：Armonk NY US
国籍：US
代理人：Michael O'Keefe
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