Negative Capacitance Field Effect Transistor With

专利名称：Negative Capacitance Field Effect Transistor

With Charged Dielectric Material

发明人：Der-Chuan Lai,Samuel C. Pan,Yu-Cheng

Shen,Min-Hung Lee,Chee-Wee Liu

申请号：US14942005申请日：20151116

公开号：US20170141235A1公开日：20170518

专利附图：

摘要：The present disclosure provides a semiconductor device in accordance withsome embodiments. The semiconductor device includes a substrate; a gate stack over

the substrate. The gate stack includes a ferroelectric layer; a first dielectric materiallayer; and a first conductive layer. One of the first dielectric material layer and theferroelectric layer is electrically charged to form a charged layer with fixed charge. Thesemiconductor device further includes source and drain features formed on the substrateand disposed on sides of the gate stack.

申请人：Taiwan Semiconductor Manufacturing Company, Ltd.,National TaiwanUniversity

地址：Hsin-Chu TW,Taipei City TW

国籍：TW,TW

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