Low temperature polysilicon thin film transistor a

专利名称：Low temperature polysilicon thin film

transistor and fabricating method thereofand array substrate

发明人：Songshan Li申请号：US159102申请日：20180302公开号：US10424668B2公开日：20190924

专利附图：

摘要：A LTPS TFT comprises a substrate, and a buffer layer, a low temperaturepolysilicon layer, a source contact area, a drain contact area, a gate insulating layer, a

gate layer, a dielectric layer, a source and a drain disposed on the substrate successively.The source contact area and the drain contact area are doped with metal ions individually.The source and the drain are connecting with the source and drain contact areas

separately through the dielectric layer. The metal ions include at least one of Cu, Al, Mg,Zn and Ni. A method of fabricating the LTPS TFT is also provided. An annealing isperformed for driving individually metal ions of the insulation metal oxide layer into thesource contact area and the drain contact area. Thus, the step of implanting p-type ionscan be omitted, the procedure can be significantly simplified, and the manufacturing costcan be reduced.

申请人：Wuhan China Star Optoelectronics Semiconductor Display Technology Co.,Ltd.

地址：Wuhan, Hubei CN

国籍：CN

代理机构：Hauptman Ham, LLP

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