Transistor2SD973, 2SD973ASilicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9±0.10.42.5±0.11.01.02.4±0.22.0±0.23.5±0.1sFeaturesqq1.51.0±0.1Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.1.5 R0.9R0.9R0.sAbsolute Maximum Ratings (Ta=25˚C)ParameterCollector tobase voltageCollector to2SD9732SD973A2SD973SymbolVCBOVCEOVEBOICPICPC*TjTstgRatings3060255051.511150–55 ~ +150UnitVV0.850.55±0.11.25±0.050.45±0.05321emitter voltage2SD973AEmitter to base voltagePeak collector currentCollector currentCollector power dissipationJunction temperatureStorage temperature*2.52.5VAAW˚C˚C1:Base2:Collector3:EmitterEIAJ:SC–71M Type Mold PackagePrinted circuit board: Copper foil area of 1cm2 or more, and the boardthickness of 1.7mm for the collector portionsElectrical Characteristics (Ta=25˚C)ParameterCollector cutoff currentCollector to basevoltageCollector to emittervoltage2SD9732SD973A2SD9732SD973ASymbolICBOVCBOVCEOVEBOhFE1*1hFE2VCE(sat)VBE(sat)fTCobConditionsVCB = 20V, IE = 0IC = 10µA, IE = 0IC = 2mA, IB = 0IE = 10µA, IC = 0VCE = 10V, IC = 500mA*2VCE = 5V, IC = 1A*2IC = 500mA, IB = 50mA*2IC = 500mA, IB = 50mA*2VCB = 10V, IE = –50mA, f = 200MHzVCB = 10V, IE = 0. f = 1MHz30602550585501601000.20.8520011200.41.2VVMHzpF*2 Pulse measurementmintypmax0.14.1±0.24.5±0.17UnitµAVVVEmitter to base voltageForward current transfer ratioCollector to emitter saturation voltageBase to emitter saturation voltageTransition frequencyCollector output capacitance*1hFE1 Rank classification340RankhFE1Q85 ~ 170R120 ~ 240S170 ~ 3401
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TransistorPC — Ta1.42SD973, 2SD973AIC — VCE1.50Ta=25˚C1.2VCE=10VTa=25˚C1.0IC — IBCollector power dissipation PC (W)1.21.00.80.60.40.20Printed circut board: Copperfoil area of 1cm2 or more, andthe board thickness of 1.7mmfor the collector portion.1.25Collector current IC (A)1.008mA7mA6mA5mA4mACollector current IC (A)IB=10mA9mA0.80.750.60.503mA2mA0.40.251mA0.2020406080100120140160002468100024681012Ambient temperature Ta (˚C)Collector to emitter voltage VCE (V)Base current IB (mA)VCE(sat) — ICCollector to emitter saturation voltage VCE(sat) (V)10310.30.10.030.010.0030.0010.010.03Ta=75˚C25˚C–25˚CVBE(sat) — ICBase to emitter saturation voltage VBE(sat) (V)IC/IB=101003010310.30.10.030.010.010.03Ta=–25˚C75˚CIC/IB=10600hFE — ICVCE=10Forward current transfer ratio hFE50040025˚C300Ta=75˚C20025˚C–25˚C1000.10.313100.10.3131000.010.030.10.31310Collector current IC (A)Collector current IC (A)Collector current IC (A)fT — IE200Cob — VCB50120VCER — RBECollector to emitter voltage VCER (V)IE=0f=1MHzTa=25˚CIC=10mATa=25˚C100160Collector output capacitance Cob (pF)VCB=10VTa=25˚CTransition frequency fT (MHz)408012030602SD973A402SD97320802040100–1–3–10–30–100013103010000.10.3131030100Emitter current IE (mA)Collector to base voltage VCB (V)Base to emitter resistance RBE (kΩ)2
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TransistorICEO — Ta104VCE=10V103ICP1032SD973, 2SD973AArea of safe operation (ASO)Single pulseTa=25˚CCollector current IC (A)10.30.10.03ICt=1st=10msICEO (Ta)ICEO (Ta=25˚C)1020.00310.0010.10204060801001201401600.313102SD973100.01302SD973A100Ambient temperature Ta (˚C)Collector to emitter voltage VCE (V)3
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