Trench gate MOSFET

专利名称：Trench gate MOSFET

发明人：Chien-Ling Chan,Chi-Hsiang Lee申请号：US14497338申请日：20140926公开号：US09406795B2公开日：20160802

专利附图：

摘要：A trench gate MOSFET is provided. An epitaxial layer is disposed on a substrate.A body layer is disposed in the epitaxial layer. The epitaxial layer has a first trench

therein, the body layer has a second trench therein, and the first trench is disposed belowthe second trench. A first insulating layer is disposed on a surface of the first trench. A

second insulating layer is disposed in the first trench. A first conductive layer is disposedbetween the first and second insulating layers. A second conductive layer is disposed inthe second trench. A third insulating layer is disposed between the second conductivelayer and the body layer and between the second conductive layer and the firstconductive layer. A dielectric layer is disposed on the epitaxial layer and covers thesecond conductive layer. Two doped regions are disposed in the body layer respectivelybeside the second trench.

申请人：UBIQ Semiconductor Corp.

地址：Hsinchu County TW

国籍：TW

代理机构：Jianq Chyun IP Office

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