Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesFB20R06KL4VorläufigPreliminaryElektrische Eigenschaften / Electrical propertiesHöchstzulässige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rückw. Spitzensperrspannungrepetitive peak reverse voltageDurchlaßstrom Grenzeffektivwert pro ChipRMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrommaximum RMS current at Rectifier outputStoßstrom Grenzwertsurge forward currentGrenzlastintegral I2t - valueTvj =25°CTC =80°CTC =80°CtP = 10 ms, Tvj = 25°CtP = 10 ms, Tvj = 150°CtP = 10 ms, Tvj = 25°CtP = 10 ms, Tvj = 150°CVRRMIFRMSMIRMSmaxIFSMIt280058964483581000642VAAAAAsA2s2Transistor Wechselrichter/ Transistor InverterKollektor-Emitter-Sperrspannungcollector-emitter voltageKollektor-DauergleichstromDC-collector currentPeriodischer Kollektor Spitzenstromrepetitive peak collector currentGesamt-Verlustleistungtotal power dissipationGate-Emitter-Spitzenspannunggate-emitter peak voltageDiode Wechselrichter/ Diode InverterDauergleichstromDC forward currentPeriodischer Spitzenstrom tP = 1 msrepetitive peak forw. currentGrenzlastintegral2It - valueVR = 0V, tp = 10ms, Tvj = 125°CIFIFRM2ItTvj =25°CTC = 65°CTC = 25 °CtP = 1 ms, TC =65°CTC = 25°CVCESIC,nom.ICICRMPtotVGES60020254080 +/- 20VVAAAWV204062AAA2sprepared by: Thomas Passeapproved by: Ingo Grafdate of publication: 2002-02-27revision: 51(11)
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesFB20R06KL4VorläufigPreliminaryRMS, f = 50 Hz, t = 1 min.NTC connected to BaseplateModul Isolation/ Module IsolationIsolations-Prüfspannunginsulation test voltageVISOL2,5kVElektrische Eigenschaften / Electrical propertiesCharakteristische Werte / Characteristic valuesDiode Gleichrichter/ Diode RectifierDurchlaßspannungforward voltageSchleusenspannungthreshold voltageErsatzwiderstandslope resistanceSperrstromreverse currentModul Leitungswiderstand, Anschlüsse-Chiplead resistance, terminals-chipTvj = 150°C, IF= 20 ATvj = 150°CTvj = 150°CTvj = 150°C, VR= 800 VTC = 25°CVFV(TO)rTIRRAA'+CC'min.---- - typ.0,850,631054max.-----VVmWmAmWTransistor Wechselrichter/ Transistor InverterVGE = 15V, Tvj = 25°C, IC =20 AKollektor-Emitter Sättigungsspannungcollector-emitter saturation voltageVGE = 15V, Tvj = 125°C, IC =20 AGate-Schwellenspannunggate threshold voltageEingangskapazitätinput capacitanceKollektor-Emitter Reststromcollector-emitter cut-off currentVCE = VGE, Tvj = 25°C, IC =0,5mAf = 1MHz, Tvj = 25°CVCE = 25 V, VGE = 0 VVGE = 0V, Tvj = 125°C, VCE =600Vmin.VCE sat--VGE(TO)CiesICESIGES4,5---typ.1,952,25,51,15,0-max.2,55-6,5--400VVVnFmAnA Gate-Emitter Reststrom VCE = 0V, VGE =20V, Tvj =25°C gate-emitter leakage currentEinschaltverzögerungszeit (ind. Last)turn on delay time (inductive load)Anstiegszeit (induktive Last)rise time (inductive load)Abschaltverzögerungszeit (ind. Last)turn off delay time (inductive load)Fallzeit (induktive Last)fall time (inductive load)Einschaltverlustenergie pro Pulsturn-on energy loss per pulseAbschaltverlustenergie pro Pulsturn-off energy loss per pulseKurzschlußverhaltenSC DataIC = INenn, VCC= 300 VVGE = ±15V, Tvj = 25°C, RG =VGE = ±15V, Tvj = 125°C, RG =VGE = ±15V, Tvj = 25°C, RG =VGE = ±15V, Tvj = 125°C, RG =VGE = ±15V, Tvj = 25°C, RG =VGE = ±15V, Tvj = 125°C, RG =47 Ohmtd,on--2231233714315422380,73---------nsns nsns nsns nsnsmWs47 OhmIC = INenn, VCC= 300 V47 Ohm47 Ohm47 Ohm47 Ohmtftd,offtr------IC = INenn, VCC= 300 VIC = INenn, VCC = 300 VVGE = ±15V, Tvj = 25°C, RG =47 OhmVGE = ±15V, Tvj = 125°C, RG =47 OhmIC = INenn, VCC = 300 VVGE = ±15V, Tvj = 125°C, RG =47 Ohm LS = 80 nHIC = INenn, VCC= 300 VVGE = ±15V, Tvj = 125°C, RG =47 OhmEon-Eoff-0,56-mWs LS = 80 nHtP £ 10µs, VGE £ 15V, RG = 47 OhmTvj£125°C, VCC =360 VISC-80-A2(11)
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesFB20R06KL4VorläufigPreliminaryElektrische Eigenschaften / Electrical propertiesCharakteristische Werte / Characteristic valuesmin.Modulinduktivitätstray inductance moduleModul Leitungswiderstand, Anschlüsse-Chiplead resistance, terminals-chipDiode Wechselrichter/ Diode InverterDurchlaßspannungforward voltageRückstromspitzepeak reverse recovery currentSperrverzögerungsladungrecovered chargeAbschaltenergie pro Pulsreverse recovery energyLsCETC = 25°CRCC'+EE' - - typ.-13max.40-nHmWmin.VGE = 0V, Tvj = 25°C, IF =20 AVGE = 0V, Tvj = 125°C, IF =20 AIF=INenn, - diF/dt = 1000 A/usVGE = -10V, Tvj = 25°C, VR = 300 VVGE = -10V, Tvj = 125°C, VR = 300 VIF=INenn, - diF/dt = 1000 A/usVGE = -10V, Tvj = 25°C, VR = 300 VVGE = -10V, Tvj = 125°C, VR = 300 VIF=INenn, - diF/dt = 1000 A/usVGE = -10V, Tvj = 25°C, VR = 300 VVGE = -10V, Tvj = 125°C, VR = 300 VErecQrIRMVF--------typ.1,71,7202311,70,20,35max.2,15-------VVAAµAsµAsmWsmWsNTC-Widerstand/ NTC-ThermistorNennwiderstandAbweichung von R100deviation of R100Verlustleistungpower dissipationB-WertB-valuemin.TC = 25°CTC = 100°C, R100 = 493 WTC = 25°CR2 = R1 exp [B(1/T2 - 1/T1)]R25DR/RP25B25/50--5typ.5max.-520kW%mWK33753(11)
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesFB20R06KL4VorläufigPreliminaryThermische Eigenschaften / Thermal propertiesmin.Innerer Wärmewiderstandthermal resistance, junction to heatsinkGleichr. Diode/ Rectif. DiodelPaste=1W/m*K RthJH---typ.1,11,83,7max.---K/WK/WK/WTrans. Wechsr./ Trans. Inverterlgrease=1W/m*K Diode Wechsr./ Diode InverterInnerer Wärmewiderstandthermal resistance, junction to caseGleichr. Diode/ Rectif. DiodeTrans. Wechsr./ Trans. InverterDiode Wechsr./ Diode InverterRthJC------11,62,7K/WK/WK/WÜbergangs-Wärmewiderstand thermal resistance, case to heatsinkGleichr. Diode/ Rectif. DiodelPaste=1W/m*K RthCH---0,20,41,3---K/WK/WK/WTrans. Wechsr./ Trans. Inverterlgrease=1W/m*K Diode Wechsr./ Diode InverterHöchstzulässige Sperrschichttemperatur maximum junction temperatureBetriebstemperatur operation temperatureLagertemperatur storage temperatureTvj TopTstg--40-40---150125125°C°C°CMechanische Eigenschaften / Mechanical propertiesInnere Isolation internal insulationCTIcomperative tracking indexAnpreßkraft f. mech. Befestigung pro Federmounting force per clampGewichtweightKontakt - Kühlkörper terminal to heatsink Kriechstrecke creeping distance Luftstrecke clearanceTerminal - Terminalterminal to terminal Kriechstrecke creeping distance Luftstrecke clearanceF GAl2O322540...8036Ng13,5mm12mm7,5mm7,5mm4(11)
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesFB20R06KL4VorläufigPreliminaryAusgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)Output characteristic Inverter (typical) VGE = 15 V40353025Tj = 25°CTj = 125°CIC [A]201510500,000,501,001,502,002,503,003,504,004,505,00VCE [V]Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)Output characteristic Inverter (typical) Tvj = 125°C403530VGE = 10V25Vge=12VVge=15VVge=20V1510500,000,501,001,502,002,503,003,504,004,505,00VGE = 8VVGE = 9VIC [A]20VCE [V]5(11)
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesFB20R06KL4VorläufigPreliminaryÜbertragungscharakteristik Wechselr. (typisch) IC = f (VGE)Transfer characteristic Inverter (typical) VCE = 20 V40353025Tj = 25°CTj = 125°CIC [A]201510505,006,007,008,009,0010,0011,0012,00VGE [V]Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)Forward characteristic of FWD Inverter (typical) 40Tj = 25°C353025Tj = 125°CIF [A]201510500,000,501,001,502,002,503,00VF [V]6(11)
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesFB20R06KL4VorläufigPreliminary300 V47 OhmSchaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC =Switching losses Inverter (typical) Tj = 125°C, VGE = ±15 V, RGon = RGoff = 3Eon2,5EoffErec2E [mWs]1,510,50051015202530354045IC [A]Schaltverluste Wechselr. (typisch) Eon = f (RG), Eoff = f (RG), Erec = f (RG)Switching losses Inverter (typical) Tj = 125°C, VGE = +-15 V , Ic = Inenn , VCC = 3Eon2,5EoffErec2300 VE [mWs]1,510,50405060708090100110120RG [W]7(11)
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesFB20R06KL4VorläufigPreliminaryTransienter Wärmewiderstand Wechselr. ZthJH = f (t)Transient thermal impedance Inverter10,000Zth-IGBTZth-FWDZthJH [K/W]1,000 i 1 2 3 4IGBT: ri [K/W]: 118,66e-3 592,55e-3 464,26e-3 624,52e-3 ti [s]: 3e-6 79,74e-3 10,28e-3 226,61e-3FWD: ri [K/W]: 245,4e-3 1,22 956,8e-3 1,27 ti [s]: 3e-6 80,4e-3 10,35e-3 227,3e-30,1000,0010,010,1110t [s]Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE)Reverse bias save operating area Inverter (RBSOA) Tvj = 125°C, VGE = ±15V, RG = 454035302520151050010020030040050060070047 OhmIC,ModulIC,ChipIC [A]VCE [V]8(11)
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesFB20R06KL4VorläufigPreliminaryDurchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF)Forward characteristic of Rectifier Diode (typical) 40353025Tj = 25°CTj = 150°CIF [A]201510500,000,200,400,600,801,001,20VF [V]NTC- Temperaturkennlinie (typisch) R = f (T)NTC- temperature characteristic (typical) 100000Rtyp10000R[W]1000100020406080100120140TC [°C]9(11)
元器件交易网www.cecb2b.comTechnische Information / Technical InformationIGBT-ModuleIGBT-ModulesFB20R06KL4VorläufigPreliminarySchaltplan/ Circuit diagramJGehäuseabmessungen/ Package outlinesBohrplan /drilling layout10(11)
元器件交易网www.cecb2b.comTechnische Information / Technical InformationIGBT-ModuleIGBT-ModulesFB20R06KL4Gehäuseabmessungen Forts. / Package outlines contd.Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.11(11)
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