PIEZORESISTIVE PRESSURE TRANSDUCER

专利名称：PIEZORESISTIVE PRESSURE TRANSDUCER发明人：SAHAGEN, Armen, N.申请号：US1991003136申请日：19910506公开号：WO91/017418P1公开日：19911114

摘要：A piezoresistive pressure transducer (80) employing a sapphire force collectordiaphragm (1) having piezoresistive films of silicon epitaxially formed on a major surfacethereof, preferably in a Wheatstone bridge pattern. The piezoresistive elements (7, 22) ofthe Wheatstone bridge are oriented so that the pressure sensitivity is maximized, whilethe linearity errors of the output voltage of the bridge in relationship to the appliedpressure are minimized. The silicon film is preferably of a thickness of from 1000 to60,000 angströms and is doped with boron in the range of from 5x1017 to 9x1020atoms/cc. Electrical arms (24) and contact pads (19) are also formed on the major surfaceof the diaphragm. The diaphragm (1) is mounted on a ceramic body (3) having a cavity (15)in the upper surface thereof, the diaphragm (1) enclosing the cavity (15) to form aprotective chamber with the films within the chamber. The diaphragm is hermeticallybonded by the ceramic glass to the body (3). The contact pads (19) are positioned over amatching number of feed through tubes in the ceramic body. A protective assemblyencloses the pressure transducer (80).

申请人：SAHAGEN, Armen, N.

地址：US

国籍：US

代理机构：MOLL, Robert

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