ON Semiconductor’s e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.
Typical applications are DC−DC converters and power managementin portable and battery powered products such as cellular and cordlessphones, PDAs, computers, printers, digital cameras and MP3 players.Other applications are low voltage motor controls in mass storageproducts such as disc drives and tape drives. In the automotiveindustry they can be used in air bag deployment and in the instrumentcluster. The high current gain allows e2PowerEdge devices to bedriven directly from PMU’s control outputs, and the Linear Gain(Beta) makes them ideal components in analog amplifiers.•This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector-Emitter VoltageCollector-Base VoltageEmitter-Base Voltage
Collector Current − ContinuousCollector Current − PeakElectrostatic Discharge
SymbolVCEOVCBOVEBOICICMESD
Max−20−20−7.0−5.0−7.0
UnitVdcVdcVdcAdcA
213http://onsemi.com
−20 VOLTS7.0 AMPS
PNP LOW VCE(sat) TRANSISTOREQUIVALENT RDS(on) 50 mW
COLLECTOR
31BASE2EMITTER
WDFN3CASE 506AU
HBM Class 3BMM Class C
MARKING DIAGRAM
VC MG1VC= Specific Device CodeM= Date CodeG= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C (Note 1)Thermal Resistance,
Junction−to−Ambient (Note 1)Total Device Dissipation, TA = 25°CDerate above 25°C (Note 2)Thermal Resistance,
Junction−to−Ambient (Note 2)Thermal Resistance,
Junction−to−Lead #1 (Note 2)Total Device Dissipation
(Single Pulse < 10 sec) (Notes 2, 3)Junction and Storage Temperature RangeOperating Case Temperature (Note 1)
SymbolPDRqJAPDRqJARqJLPDsingleTJ, TstgTC
Max8757.01431.511.885233.0−55 to+150−55 to+125
UnitmWmW/°C°C/WWmW/°C°C/W°C/WW°C°C
ORDERING INFORMATION
DeviceNSS20500UW3T2G
PackageWDFN3(Pb−Free)
Shipping†3000/Tape & Reel
†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1.FR−4 @ 100 mm2, 1 oz copper traces.2.FR−4 @ 500 mm2, 1 oz copper traces.3.Thermal response.
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 2
1
Publication Order Number:
NSS20500UW3/D
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NSS20500UW3T2G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage(IC = −10 mAdc, IB = 0)
Collector−Base Breakdown Voltage(IC = −0.1 mAdc, IE = 0)
Emitter−Base Breakdown Voltage(IE = −0.1 mAdc, IC = 0)Collector Cutoff Current(VCB = −20 Vdc, IE = 0)Emitter Cutoff Current(VEB = −7.0 Vdc)ON CHARACTERISTICSDC Current Gain (Note 4)(IC = −10 mA, VCE = −2.0 V)(IC = −500 mA, VCE = −2.0 V)(IC = −1.0 A, VCE = −2.0 V)(IC = −2.0 A, VCE = −2.0 V)(IC = −3.0 A, VCE = −2.0 V)
Collector−Emitter Saturation Voltage (Note 4)(IC = −0.1 A, IB = −0.010 A) (Note 5)(IC = −1.0 A, IB = −0.100 A)(IC = −1.0 A, IB = −0.010 A)(IC = −2.0 A, IB = −0.020 A)(IC = −3.0 A, IB = −0.030 A)(IC = −4.0 A, IB = −0.400 A)
Base−Emitter Saturation Voltage (Note 4)(IC = −1.0 A, IB = −0.01 A)
Base−Emitter Turn−on Voltage (Note 4)(IC = −2.0 A, VCE = −3.0 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)SWITCHING CHARACTERISTICS
Delay (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)Rise (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)Storage (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)Fall (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
4.Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.5.Guaranteed by design but not tested.
tdtrtstf
−−−−
−−−−
75160350160
nsnsnsns
hFE
250250220200180−−−−−−−−100−−
−−300300250−0.010−0.050−0.080−0.150−0.200−0.2700.760.80−
−−−−−−0.015−0.070−0.100−0.170−0.240−0.260−0.900−0.900−475180
V
V(BR)CEOV(BR)CBOV(BR)EBOICBOIEBO
−20−20−7.0−−
−−−−−
−−−−0.1−0.1
VdcVdcVdcmAdcmAdc
Symbol
Min
Typical
Max
Unit
VCE(sat)
VBE(sat)VBE(on)
fTCiboCobo
VVMHzpFpF
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2
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NSS20500UW3T2G
0.5VCE(sat), COLLECTOR EMITTERSATURATION VOLTAGE (V)VCE(sat), COLLECTOR EMITTERSATURATION VOLTAGE (V)IC/IB = 100.40.3VCE(sat) = 150°C0.225°C0.1−55°C00.0010.010.11.0103.53.02.52.01.51.00.500.00125°C0.010.11.010IC, COLLECTOR CURRENT (A)
VCE(sat) = −55°C150°CIC/IB = 100IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector CurrentFigure 2. Collector Emitter Saturation Voltage
vs. Collector Current
850750hFE, DC CURRENT GAIN650550450350250150500.0010.01150°C (5 V)VBE(sat), BASE EMITTERSATURATION VOLTAGE (V)1.41.21.0
−55°C0.80.60.40.20.00125°C150°C150°C (2 V)25°C (5 V)25°C (2 V)−55°C (5 V)−55°C (2 V)0.11100.010.11.010IC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs.
Collector CurrentFigure 4. Base Emitter Saturation Voltage vs.
Collector Current
VBE(on), BASE EMITTER TURN−ON VOLTAGE (V)1.11.00.90.80.70.60.50.40.30.20.10.0010.010.11.010150°CVCE = −1.0 V−55°C25°CVCE, COLLECTOR−EMITTER VOLTAGE (V)1.00.80.60.40.2
10 mA100 mA300 mAIC = 500 mA00.010.11.010100IC, COLLECTOR CURRENT (A)IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
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3
Figure 6. Saturation Region
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NSS20500UW3T2G
550
Cobo, OUTPUT CAPACITANCE (pF)Cibo, INPUT CAPACITANCE (pF)500450400350300250200
01.02.03.04.05.06.0Cibo (pF)26024022020018016014012010080
05.010152025Cobo (pF)VEB, EMITTER BASE VOLTAGE (V)VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input CapacitanceFigure 8. Output Capacitance
10
1IC (A)1.0 mS1.0 SThermalLimit10 mS100 mS0.1
0.01
0.010.11VCE (Vdc)
10100Figure 9. PNP Safe Operating Area
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NSS20500UW3T2G
PACKAGE DIMENSIONS
WDFN3
CASE 506AU−01
ISSUE O
DABPIN ONEREFERENCENOTES:
1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 .2.CONTROLLING DIMENSION: MILLIMETERS.
3.DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.4.COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL ASTHE TERMINALS.
DIMAA1A3bDD2EE2eKLMIN0.700.000.251.400.900.35MILLIMETERS
NOMMAX0.750.800.050.20 REF0.300.352.00 BSC1.501.602.00 BSC1.001.101.30 BSC0.35 REF0.400.45MIN0.0280.0000.010INCHESNOM0.030MAX0.0310.0020.0140.0630.0430.018E2 X0.10C2 X0.008 REF0.0120.079 BSC0.0550.0590.079 BSC0.0350.039
0.051 BSC0.014 REF0.0140.0160.10CTOP VIEWSOLDERING FOOTPRINT*
0.10C8 XA(A3)C1.3002X0.4000.6000.2500.08CSEATINGPLANEA1SIDE VIEWD2e11.1002e/20.4001.6000.3002XLK0.275E2*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.
33Xb0.10CAB0.05CNOTE 3BOTTOM VIEW
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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