专利名称：SEMICONDUCTOR DEVICE HAVING TRENCH
GATE STRUCTURE AND METHOD FORMANUFACTURING THE SEMICONDUCTORDEVICE
发明人：Hajime OKUDA,Yasushi HAMAZAWA申请号：US14936666申请日：20151109
公开号：US20160133742A1公开日：20160512
专利附图：
摘要：A semiconductor device of the present invention includes a semiconductor layer
in which a gate trench is formed, a gate insulating film formed along an inner surface ofthe gate trench, a gate electrode that is buried in the gate trench through the gateinsulating film and that has a lower electrode and an upper electrode that are separatedupwardly and downwardly from each other with an intermediate insulating film betweenthe lower electrode and the upper electrode, and a gate contact that is formed in thegate trench so as to pass through the upper electrode and through the intermediateinsulating film and so as to reach the lower electrode and that electrically connects thelower electrode and the upper electrode together.
申请人：ROHM CO., LTD.
地址：Kyoto JP
国籍：JP
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