MICROORGANISM CULTURE METHOD AND CULTURE APPARATUS

专利名称：MICROORGANISM CULTURE METHOD AND

CULTURE APPARATUS

发明人：Tetsuya ISHII,Kanetomo SATOU,Yoji

FUJIMORI,Kokoro HAMACHI,NorihideNISHIYAMA

申请号：US15511800申请日：20150914

公开号：US20170306286A1公开日：20171026

专利附图：

摘要：Gas-utilizing microorganisms are stably cultured regardless of variations in a

supply flow rate of a substrate gas. Gas-utilizing microorganisms are cultured in a culturesolution in a culture tank . A substrate gas containing CO and Hor the like is supplied tothe culture tank and is dissolved in the culture solution . When a supply flow rate of thesubstrate gas or predetermined constituents of the substrate gas to the culture tankbecomes a predetermined value or lower, a culture solution is rapidly discharged fromthe culture tank

申请人：SEKISUI CHEMICAL CO., LTD.

地址：Osaka JP

国籍：JP

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