Multiple-valued DRAM

专利名称：Multiple-valued DRAM

发明人：Hun Woo Kye,Bok-Nam Song,Jung Bum Choi申请号：US11993413申请日：20060911公开号：US08031512B2公开日：20111004

专利附图：

摘要：Provided herein is an MV DRAM device for storing multiple value levels using anSET device. The device includes one or more word lines; one or more bitlines; a DRAM cellconnected to intersections of the word lines and the bitlines; a current source transistorhaving a source connected to a power supply voltage and a gate and a drain connected

to the bitlines; an SET (single electron transistor) device having a gate connected to thebitlines and a source connected to the ground voltage; and a transistor connectedbetween the bitlines and the drain of the SET device, where the gate of the transistor isconnected to the ground voltage.

申请人：Hun Woo Kye,Bok-Nam Song,Jung Bum Choi

地址：Icheon-si KR,Seongnam-si KR,Cheongju-si KR

国籍：KR,KR,KR

代理机构：Cantor Colburn LLP

更多信息请下载全文后查看