专利名称:Energy efficient three-terminal voltage
controlled memory cell
发明人:Hao Meng,Yong Wee Francis Poh,Tze Ho
Simon Chan
申请号:US14927500申请日:20151030公开号:US095616B2公开日:20170307
专利附图:
摘要:Memory cell, method for operating the memory cell and method for fabricatingthe memory cell are disclosed. The memory cell includes at least three terminals, a first
magnetic tunnel junction (MTJ) structure and a second MTJ structure. The first MTJ iscoupled between a first terminal (FT) and a third terminal. A portion of the first MTJ isconfigured to include a first barrier layer disposed between a first fixed layer and a freelayer (FL). A magnetization direction of the FL is used to store data, the magnetizationdirection being controlled by an electric field. The second MTJ is coupled between the FTand a second terminal, where a portion of the second MTJ is configured to include asecond barrier layer disposed between a second fixed layer and the FL, where a tunnelmagnetoresistance of the second barrier layer is used to read the data.
申请人:GLOBALFOUNDRIES Singapore Pte. Ltd.
地址:Singapore SG
国籍:SG
代理机构:Horizon IP Pte. Ltd.
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