Power MOSFET
N-Channel Enhancement ModeAvalanche Rated
IXTA130N10TIXTP130N10T
RDS(on)
VDSSID25
= 100V= 130A≤ 9.1mΩ
TO-263 (IXTA)
SymbolVDSSVDGRVGSMID25ILRMSIDMIAEASPDTJTJMTstgTL
TSOLDMdWeight
Test Conditions
TJ= 25°C to 175°C
TJ= 25°C to 175°C, RGS = 1MΩTransient
TC= 25°C
Lead Current Limit, RMS
TC= 25°C, pulse width limited by TJMTC= 25°CTC= 25°CTC= 25°C
Maximum Ratings
100100± 301307535065500360
-55 ... +175
175
-55 ... +175
VVVAAAAmJW°C°C°C°C°C
G
S
(TAB)
TO-220 (IXTP)
G
D
S
(TAB)
D = DrainTAB = Drain
G = GateS = Source
Features
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1.6mm (0.062 in.) from case for 10sPlastic body for 10 secondsMounting torque (TO-220)TO-220TO-263
300260
1.13 / 10 Nm/lb.in.
3.0g2.5 g
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Ultra-low On Resistance
Unclamped Inductive Switching (UIS)rated
Low package inductance-easy to drive and to protect175 °C Operating Temperature
Advantages
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SymbolTest ConditionsCharacteristic Values(TJ = 25°C unless otherwise specified) Min. Typ. Max.BVDSSVGS(th)IGSSIDSSRDS(on)
VGS= 0V, ID = 250μAVDS= VGS, ID = 250μAVGS= ± 20V, VDS = 0VVDS= VDSS VGS= 0V
TJ = 150°C
100
2.5 4.5 ± 200
VVnA
Easy to mountSpace savingsHigh power density
Applications
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5μA 250 μA 9.1mΩ
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VGS= 10V, ID = 25A, Notes 1, 2
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Automotive-Motor Drives-42V Power Bus-ABS Systems
DC/DC Converters and Off-line UPSPrimary Switch for 24V and 48VSystems
Distributed Power Architechturesand VRMs
Electronic Valve Train SystemsHigh Current SwitchingApplications
High Voltage Synchronous Recifier
© 2008 IXYS CORPORATION, All rights reservedDS99649B(07/08)
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IXTA130N10TIXTP130N10TSymbolgfsCissCossCrsstd(on)trtd(off)tfQg(on)QgsQgdRthJCRthCHTO-2200.50VGS= 10V, VDS = 0.5 • VDSS, ID = 25AResistive Switching TimesVGS = 10V, VDS = 0.5 • VDSS, ID = 25ARG = 5Ω (External)VGS = 0V, VDS = 25V, f = 1MHzTest Conditions Characteristic ValuesMin.55Typ.93508063595304744281043029Max.SpFpFpFnsnsnsnsnCnCnC 0.42 °C/W°C/WPins:1 - Gate3 - Source Dim.AA1bb2cc2DD1TO-263 (IXTA) Outline(TJ = 25°C unless otherwise specified)VDS= 10V, ID = 60A, Note 12 - Drain4, TAB - DrainInchesMin.Max..160.080.020.045.018.045.340.280.380.270.100.575.090.040.0500.018.190.110.039.055.029.055.380.320.405.320BSC.625.110.055.070.015.029MillimeterMin.Max.4.062.030.511.140.461.148.647.119.656.862.5414.612.291.021.2700.464.832.790.991.400.741.409.658.1310.298.13BSC15.882.791.401.780.380.74Source-Drain DiodeSymbolTest ConditionsTJ = 25°C unless otherwise specified)ISISMVSDtrrIRMQrrIF = 0.5 • IS, -di/dt = 100A/μsVR = 0.5 • VDSS, VGS = 0VVGS = 0VPulse width limited by TJMIF = 25A, VGS = 0V, Note 1674.7160Characteristic ValuesMin.Typ.Max.1303501.0AAVns A nCEE1eLL1L2L3L4RTO-220 (IXTP) OutlineNotes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body.Pins:1 - Gate3 - Source2 - Drain4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETs and IGBTs are covered4,835,592by one or moreof the following U.S. patents:4,850,072
4,881,106
4,931,8445,017,5085,034,796
5,049,9615,063,3075,187,117
5,237,4815,381,0255,486,715
6,162,6656,259,123 B16,306,728 B1
6,404,065 B16,534,3436,583,505
6,683,3446,727,5857,005,734 B2 7,157,338B26,710,405 B26,759,6927,063,975 B26,710,4636,771,478 B27,071,537
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IXTA130N10TIXTP130N10TFig. 1. Output Characteristics@ 25ºC13012011010090200VGS = 10V 8V 280240VGS = 10V 9VFig. 2. Extended Output Characteristics@ 25ºC8VID - Amperes807060504030201000.00.10.20.30.40.50.60.70.80.91.01.11.26V7VID - Amperes160120804000123456789107V6VVDS - VoltsVDS - VoltsFig. 3. Output Characteristics@ 150ºC13012011010090VGS = 10V 9V 8V 2.82.62.4Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction TemperatureVGS = 10VRDS(on) - Normalized2.22.01.81.61.41.21.0I D = 130AI D = 65A ID - Amperes807060504030201000.00.40.81.21.62.02.42.85V6V7V0.80.60.4-50-250255075100125150175VDS - VoltsTJ - Degrees CentigradeFig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current3.02.82.6 VGS = 10V 15V - - - - TJ = 175ºC140Fig. 6. Drain Current vs. Case Temperature External Lead Current Limit for TO-263 (7-Lead)120100RDS(on) - Normalized2.42.22.01.81.61.41.21.00.804080120160200240280TJ = 25ºCID - Amperes806040200-50-250255075100125150175 External Lead Current Limit for TO-3P, TO-220, & TO-263ID - AmperesTC - Degrees Centigrade© 2008 IXYS CORPORATION, All rights reserved
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IXTA130N10TIXTP130N10TFig. 7. Input Admittance270240210TJ = - 40ºC 25ºC 150ºC130120110100TJ = - 40ºCFig. 8. Transconductanceg f s - SiemensID - Amperes18015012090603003.54.04.55.05.56.06.57.07.58.09080706050403020100020406080100120140160180200220150ºC 25ºC VGS - VoltsID - AmperesFig. 9. Forward Voltage Drop of Intrinsic Diode27024021010987 VDS = 50V I D = 25A I G = 10mA Fig. 10. Gate ChargeIS - AmperesVGS - VoltsTJ = 150ºCTJ = 25ºC0.40.50.60.70.80.91.01.11.21.3180150120906030065432100102030405060708090100110VSD - VoltsQG - NanoCoulombsFig. 11. Capacitance10,0001.00Fig. 12. Maximum Transient Thermal ImpedanceCapacitance - PicoFaradsCissCossZ(th)JC - ºC / W 3035401,0000.10100Crss f = 1 MHz 1005101520250.010.00010.0010.010.1110VDS - VoltsPulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions.
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IXTA130N10TIXTP130N10TFig. 13. Resistive Turn-onRise Time vs. Junction Temperature6560555045403530252535455565758595105115125I D = 25A302622253035404550 RG = 5Ω VGS = 10V VDS = 50V625854 RG = 5Ω VGS = 10V VDS = 50VTJ = 25ºCFig. 14. Resistive Turn-onRise Time vs. Drain Currentt r - Nanosecondst r - Nanoseconds5046423834TJ = 125ºCI D = 50ATJ - Degrees CentigradeID - AmperesFig. 15. Resistive Turn-onSwitching Times vs. Gate Resistance130120110 t r td(on) - - - - TJ = 125ºC, VGS = 10V VDS = 50V I D = 50A535047444138I D = 25A3532292623204681012141618202638363432302840Fig. 16. Resistive Turn-offSwitching Times vs. Junction Temperature68 t f td(off) - - - - RG = 5Ω, VGS = 10V VDS = 50V 64605652I D = 50A484440125t r - Nanoseconds1009080706050403020t d(on) - Nanosecondst d(off) - Nanosecondst f - NanosecondsI D = 25A2535455565758595105115RG - OhmsTJ - Degrees CentigradeFig. 17. Resistive Turn-off Switching Times vs. Drain Current403836TJ = 125ºC t f td(off) - - - - RG = 5Ω, VGS = 10V VDS = 50V 5450TJ = 25ºC46423825303540455070666258100908070605040304Fig. 18. Resistive Turn-offSwitching Times vs. Gate Resistance170 t r td(on) - - - - TJ = 125ºC, VGS = 10V VDS = 50V 25A < I D < 50A150130110I D = 25A90I D = 50A70503068101214161820t d(off) - Nanoseconds343230282624t f - Nanosecondst d(off) - Nanosecondst f - NanosecondsID - AmperesRG - Ohms© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_130N10T (4V) 7-29-08-A
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