QM100TX1-HB资料

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元器件交易网www.cecb2b.comMITSUBISHI TRANSISTOR MODULESQM100TX1-HBHIGH POWER SWITCHING USEINSULATED TYPEQM100TX1-HB•••••ICCollector current........................100AVCEXCollector-emitter voltage...........600VhFEDC current gain.............................750Insulated TypeUL RecognizedYellow Card No.E80276 (N)File No.E80271APPLICATIONInverters, Servo drives, UPS, DC motor controllers, NC equipment, WeldersOUTLINE DRAWING & CIRCUIT DIAGRAMDimensions in mm68810.5B1B3B5(P)+201462.5–00.274±0.2520148611–M4(10)18.524.828.226B2UB618.5B4V(N)–18.580±0.2594P (+)B1LABEL742W18.5(10)4–φ5.4±0.110B3UB5VB6N (–)WB21313B4Feb.1999

元器件交易网www.cecb2b.com

MITSUBISHI TRANSISTOR MODULES

QM100TX1-HB

HIGH POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

SymbolVCEX (SUS)VCEXVCBOVEBOIC–ICPCIB–ICSMTjTstgViso

Parameter

Collector-emitter voltageCollector-emitter voltageCollector-base voltageEmitter-base voltageCollector currentCollector reverse currentCollector dissipationBase current

Surge collector reverse current(forward diode current)Junction temperatureStorage temperatureIsolation voltage

Charged part to case, AC for 1 minuteMain terminal screw M4

—

Mounting torque

Mounting screw M5B(E) teminal screw M4

—

Weight

Typical valueIC=1A, VEB=2VVEB=2VEmitter openCollector openDC

DC (forward diode current)TC=25°CDC

Peak value of one cycle of 60Hz (half wave)

Conditions

Ratings60060060071003504.51001000–40~+150–40~+12525000.98~1.4710~151.47~1.9615~200.98~1.4710~15520

UnitVVVVAAWAA°C°CVN·mkg·cmN·mkg·cmN·mkg·cmg

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

SymbolICEXICBOIEBOVCE (sat)VBE (sat)–VCEOhFEtontstfRth (j-c) QRth (j-c) RRth (c-f)

Thermal resistance(junction to case)

Contact thermal resistance(case to fin)

Transistor part (per 1/6 module)Diode part (per 1/6 module)

Conductive grease applied (per 1/6 module)

Switching time

VCC=300V, IC=100A, IB1=150mA, –IB2=2.0A

Parameter

Collector cutoff currentCollector cutoff currentEmitter cutoff current

Collector-emitter saturation voltageBase-emitter saturation voltageCollector-emitter reverse voltageDC current gain

VCE=600V, VEB=2VVCB=600V, Emitter openVEB=7V, Collector openIC=100A, IB=150mA

IC=–100A (diode forward voltage)IC=100A, VCE=2.5V

Test conditions

Limits

Min.——————750——————

Typ.—————————————

Max.1.01.01502.53.01.8—2.08.03.00.351.30.2

UnitmAmAmAVVV—µsµsµs°C/W°C/W°C/W

Feb.1999

元器件交易网www.cecb2b.com

MITSUBISHI TRANSISTOR MODULES

QM100TX1-HB

HIGH POWER SWITCHING USE

INSULATED TYPE

PERFORMANCE CURVESCOMMON EMITTER OUTPUTCHARACTERISTICS (TYPICAL)200COLLECTOR CURRENTIC (A)160IB=200mA12080Tj=25°CDC CURRENT GAINhFE2VCE=5.0V410 732310 732DC CURRENT GAIN VS.COLLECTOR CURRENT (TYPICAL)IB=100mAIB=50mAIB=20mAVCE=2.5V400IB=10mATj=25°CTj=125°C12345710 22345710 012345VCE (V)2COLLECTOR-EMITTER VOLTAGECOLLECTOR CURRENTIC (A)VCE (sat), VBE (sat) (V)COMMON EMITTER INPUTCHARACTERISTIC (TYPICAL)010 732–110 SATURATION VOLTAGECHARACTERISTICS (TYPICAL)110 732010 VCE=2.5VTj=25°CBASE CURRENTIB (A)VBE(sat)VCE(sat)732–210 2.0SATURATION VOLTAGE732–110 10 1 22345710 IB=100mATj=25°CTj=125°C32345710 2.42.83.23.6VBE (V)4.0BASE-EMITTER VOLTAGECOLLECTOR CURRENTIC (A)COLLECTOR-EMITTER SATURATIONVOLTAGE (TYPICAL)COLLECTOR-EMITTER SATURATIONVOLTAGEVCE (sat) (V)Tj=25°CTj=125°CSWITCHING TIME VS. COLLECTORCURRENT (TYPICAL)110 VCC=300V7IB1=150mA5IB2=–2.0A432ts010 75tf43ton2Tj=25°CTj=125°C–110 0110 2345710 3210–3235710 –2235710 –1235710 010 BASE CURRENTIB (A)IC=75AIC=50AIC=30ASWITCHING TIMEton, ts, tf (µs)22345710 COLLECTOR CURRENTIC (A)Feb.1999

元器件交易网www.cecb2b.com

MITSUBISHI TRANSISTOR MODULES

QM100TX1-HB

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME VS. BASECURRENT (TYPICAL)110 732010 732–110 010 REVERSE BIAS SAFE OPERATING AREAtsCOLLECTOR CURRENTIC (A)ts, tf (µs)VCC=300VIB1=150mAIC=75A300200IB2=–2.0AIB2=–3.5A100SWITCHING TIMEtfTj=25°CTj=125°C12345710 22345710 0Tj=125°C0100200300400500600700800BASE REVERSE CURRENT–IB2 (A)COLLECTOR-EMITTER VOLTAGEVCE (V)FORWARD BIAS SAFE OPERATING AREA10 3 753210 2 75321009080706050403020100DERATING FACTOR OF F. B. S. O. A.500µs100µsCOLLECTOR CURRENTIC (A)SECONDBREAKDOWNAREA500µs1msDERATING FACTOR (%)DC10 1 753TC=25°C2NON–REPETITIVE10 0 10 0 235710 1 235710 2 235710 3 COLLECTORDISSIPATION020406080100120140160COLLECTOR-EMITTER VOLTAGEVCE (V)CASE TEMPERATURETC (°C)COLLECTOR REVERSE CURRENT–IC (A)TRANSIENT THERMAL IMPEDANCECHARACTERISTIC (TRANSISTOR)10 0 235710 1 235710 2 0.50.4Zth (j–c) (°C/ W)0.30.20.10–3235710 –2235710 –1235710 010 210 732110 732010 REVERSE COLLECTOR CURRENT VS.COLLECTOR-EMITTER REVERSEVOLTAGE (DIODE FORWARDCHARACTERISTICS) (TYPICAL)Tj=25°CTj=125°C00.40.81.21.62.0TIME (s)COLLECTOR-EMITTER REVERSE VOLTAGE–VCEO (V)Feb.1999

元器件交易网www.cecb2b.com

MITSUBISHI TRANSISTOR MODULES

QM100TX1-HB

HIGH POWER SWITCHING USE

INSULATED TYPE

RATED SURGE COLLECTOR REVERSE CURRENT(DIODE FORWARD SURGE CURRENT)SURGE COLLECTOR REVERSE CURRENT–ICSM (A)8007006005004003002001000010 12345710 22345710 REVERSE RECOVERY CHARACTERISTICSOF FREE-WHEEL DIODE (TYPICAL)10 2 7532Irr (A), Qrr (µc)10 1 7532Tj=25°CTj=125°CIrrQrr10 1 trr (µs)FORWARD CURRENTIF (A)Feb.1999

10 2 10 0 10 0 7trr5VCC=300V3IB1=150mA2IB2=–2.0A–1–110 10 10 0 235710 1 235710 2 235710 3 CONDUCTION TIME (CYCLES AT 60Hz)TRANSIENT THERMAL IMPEDANCECHARACTERISTIC (DIODE)10 0 235710 1 23572.01.6Zth (j–c) (°C/ W)1.20.80.40–3235710 –2235710 –1235710 010 TIME (s)

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